component
IPP200N25N3 G
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPP200N25N3 G
Infineon Technologies · MOSFETs · TO-220-3
IPP200N25N3 G from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate (pin 1); gate-source voltage limit is ±20 V, with typical gate threshold VGS(th) of 3 V (2 to 4 V) at ID=270 µA. |
| 2 | D | passive | Drain (pin 2); VDS is 250 V, continuous drain current is 64 A at TC=25 °C and pulsed drain current is 256 A. |
| 3 | S | passive | Source (pin 3); RDS(on) is max 20 mΩ at VGS=10 V and ID=64 A, and the body diode continuous forward current is 64 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 64 | A | TC=25 °C | 1 | ||
| Continuous drain current | ID | 46 | A | TC=100 °C | 1 | ||
| Pulsed drain current | ID,pulse | 256 | A | TC=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 320 | mJ | ID=47 A, RGS=25 W | 1 | ||
| Reverse diode dv/dt | dv/dt | 10 | kV/µs | 1 | |||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 300 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction - case | RthJC | 0.5 | K/W | 2 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 40 | K/W | 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 250 | V | VGS=0 V, ID=1 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=270 µA | 2 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=200 V, VGS=0 V, Tj=25 °C | 2 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=200 V, VGS=0 V, Tj=125 °C | 2 | |
| Gate-source leakage current | IGSS | 1 | 100 | nA | VGS=20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance | RDS(on) | 17.5 | 20 | mW | VGS=10 V, ID=64 A | 2 | |
| Transconductance | gfs | 61 | 122 | S | /VDS/>2/ID/RDS(on)max, ID=64 A | 2 | |
| Input capacitance | Ciss | 5340 | 7100 | pF | VGS=0 V, VDS=100 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 297 | 395 | pF | VGS=0 V, VDS=100 V, f=1 MHz | 3 | |
| Gate charge total | Qg | 64 | 86 | nC | VDD=100 V, ID=25 A, VGS=0 to 10 V | 3 | |
| Output charge | Qoss | 135 | 179 | nC | VDD=100 V, VGS=0 V | 3 | |
| Diode continuous forward current | IS | 64 | A | 3 | |||
| Diode pulse current | IS,pulse | 256 | A | 3 | |||
| Diode forward voltage | VSD | 1 | 1.2 | V | VGS=0 V, IF=64 A, Tj=25 °C | 3 |
CAD (KiCad official)
- Symbol:
IPP200N25N3 G - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ipp200n25n3-g-etched.step/ipp200n25n3-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp200n25n3-g.step/ipp200n25n3-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
c77e409d831124d2, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).