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IPP129N10NF2SAKMA1

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Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPP129N10NF2SAKMA1

Infineon Technologies · MOSFETs · TO-220-3

IPP129N10NF2SAKMA1 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin of the N-channel MOSFET, with VGS rated from -20 V to 20 V and a threshold of 2.2 V to 3.8 V at ID=30 µA.
2 Drain passive Drain pin, also connected to the tab, with VDS of 100 V and continuous ID of 52 A at TC=25°C.
3 Source passive Source pin of the N-channel MOSFET, with RDS(on) max of 12.9 mΩ at VGS=10 V and ID=30 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 52 A VGS=10V, TC=25°C 3
Continuous drain current ID 37 A VGS=10V, TC=100°C 3
Continuous drain current ID 33 A VGS=6V, TC=100°C 3
Continuous drain current ID 12 A VGS=10V, TA=25°C, RthJA=40°C/W 3
Pulsed drain current ID,pulse 208 A TA=25°C 3
Avalanche energy, single pulse EAS 31 mJ ID=25A, RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 71 W TC=25°C 3
Power dissipation Ptot 3.8 W TA=25°C, RthJA=40°C/W 3
Operating and storage temperature Tj,Tstg -55 175 °C 3
Thermal resistance, junction - case RthJC 2.1 °C/W 3
Thermal resistance, junction - ambient, 6 cm² cooling area RthJA 40 °C/W 6 cm² cooling area 3
Thermal resistance, junction - ambient, minimal footprint RthJA 62 °C/W minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=1mA 4
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS, ID=30µA 4
Zero gate voltage drain current IDSS 0.1 1 µA VDS=100V, VGS=0V, Tj=25°C 4
Zero gate voltage drain current IDSS 10 100 µA VDS=100V, VGS=0V, Tj=125°C 4
Gate-source leakage current IGSS 10 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 11.6 12.9 mΩ VGS=10V, ID=30A 4
Drain-source on-state resistance RDS(on) 14.2 16.2 mΩ VGS=6V, ID=15A 4
Transconductance gfs 24 S /VDS/≥2/ID/RDS(on)max, ID=30A 4
Gate charge total Qg 19 28 nC VDD=50V, ID=30A, VGS=0 to 10V 4
Diode continuous forward current IS 51 A TC=25°C 5
Diode pulse current IS,pulse 208 A TC=25°C 5
Diode forward voltage VSD 0.93 1.2 V VGS=0V, IF=30A, Tj=25°C 5
Gate resistance RG 0.9 Ω 4
Input capacitance Ciss 1300 pF VGS=0V, VDS=50V, f=1MHz 4
Output capacitance Coss 210 pF VGS=0V, VDS=50V, f=1MHz 4
Reverse transfer capacitance Crss 10 pF VGS=0V, VDS=50V, f=1MHz 4
Turn-on delay time td(on) 8.8 ns VDD=50V, VGS=10V, ID=30A, RG,ext=1.6Ω 4
Rise time tr 15 ns VDD=50V, VGS=10V, ID=30A, RG,ext=1.6Ω 4
Turn-off delay time td(off) 13 ns VDD=50V, VGS=10V, ID=30A, RG,ext=1.6Ω 4
Fall time tf 3.6 ns VDD=50V, VGS=10V, ID=30A, RG,ext=1.6Ω 4
Gate to source charge Qgs 6.4 nC VDD=50V, ID=30A, VGS=0 to 10V 4
Gate charge at threshold Qg(th) 3.9 nC VDD=50V, ID=30A, VGS=0 to 10V 4
Gate to drain charge Qgd 4.1 nC VDD=50V, ID=30A, VGS=0 to 10V 4
Switching charge Qsw 6.5 nC VDD=50V, ID=30A, VGS=0 to 10V 4
Gate plateau voltage Vplateau 4.9 V VDD=50V, ID=30A, VGS=0 to 10V 4
Output charge Qoss 26 nC VDS=50V, VGS=0V 4
Reverse recovery time trr 26 ns VR=50V, IF=30A, diF/dt=500A/µs 5
Reverse recovery charge Qrr 135 nC VR=50V, IF=30A, diF/dt=500A/µs 5

CAD (KiCad official)

  • Symbol: IPP129N10NF2SAKMA1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp129n10nf2sakma1-etched.step / ipp129n10nf2sakma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp129n10nf2sakma1.step / ipp129n10nf2sakma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 43fa2347c516359e, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF