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ipp129n10nf2sakma1
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Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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README
markdownIPP129N10NF2SAKMA1
Infineon Technologies · MOSFETs · TO-220-3
IPP129N10NF2SAKMA1 from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin of the N-channel MOSFET, with VGS rated from -20 V to 20 V and a threshold of 2.2 V to 3.8 V at ID=30 µA. |
| 2 | Drain | passive | Drain pin, also connected to the tab, with VDS of 100 V and continuous ID of 52 A at TC=25°C. |
| 3 | Source | passive | Source pin of the N-channel MOSFET, with RDS(on) max of 12.9 mΩ at VGS=10 V and ID=30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 52 | A | VGS=10V, TC=25°C | 3 | ||
| Continuous drain current | ID | 37 | A | VGS=10V, TC=100°C | 3 | ||
| Continuous drain current | ID | 33 | A | VGS=6V, TC=100°C | 3 | ||
| Continuous drain current | ID | 12 | A | VGS=10V, TA=25°C, RthJA=40°C/W | 3 | ||
| Pulsed drain current | ID,pulse | 208 | A | TA=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 31 | mJ | ID=25A, RGS=25Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation | Ptot | 71 | W | TC=25°C | 3 | ||
| Power dissipation | Ptot | 3.8 | W | TA=25°C, RthJA=40°C/W | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 175 | °C | 3 | ||
| Thermal resistance, junction - case | RthJC | 2.1 | °C/W | 3 | |||
| Thermal resistance, junction - ambient, 6 cm² cooling area | RthJA | 40 | °C/W | 6 cm² cooling area | 3 | ||
| Thermal resistance, junction - ambient, minimal footprint | RthJA | 62 | °C/W | minimal footprint | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=1mA | 4 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS, ID=30µA | 4 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=100V, VGS=0V, Tj=25°C | 4 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=100V, VGS=0V, Tj=125°C | 4 | |
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=20V, VDS=0V | 4 | |
| Drain-source on-state resistance | RDS(on) | 11.6 | 12.9 | mΩ | VGS=10V, ID=30A | 4 | |
| Drain-source on-state resistance | RDS(on) | 14.2 | 16.2 | mΩ | VGS=6V, ID=15A | 4 | |
| Transconductance | gfs | 24 | S | /VDS/≥2/ID/RDS(on)max, ID=30A | 4 | ||
| Gate charge total | Qg | 19 | 28 | nC | VDD=50V, ID=30A, VGS=0 to 10V | 4 | |
| Diode continuous forward current | IS | 51 | A | TC=25°C | 5 | ||
| Diode pulse current | IS,pulse | 208 | A | TC=25°C | 5 | ||
| Diode forward voltage | VSD | 0.93 | 1.2 | V | VGS=0V, IF=30A, Tj=25°C | 5 | |
| Gate resistance | RG | 0.9 | Ω | 4 | |||
| Input capacitance | Ciss | 1300 | pF | VGS=0V, VDS=50V, f=1MHz | 4 | ||
| Output capacitance | Coss | 210 | pF | VGS=0V, VDS=50V, f=1MHz | 4 | ||
| Reverse transfer capacitance | Crss | 10 | pF | VGS=0V, VDS=50V, f=1MHz | 4 | ||
| Turn-on delay time | td(on) | 8.8 | ns | VDD=50V, VGS=10V, ID=30A, RG,ext=1.6Ω | 4 | ||
| Rise time | tr | 15 | ns | VDD=50V, VGS=10V, ID=30A, RG,ext=1.6Ω | 4 | ||
| Turn-off delay time | td(off) | 13 | ns | VDD=50V, VGS=10V, ID=30A, RG,ext=1.6Ω | 4 | ||
| Fall time | tf | 3.6 | ns | VDD=50V, VGS=10V, ID=30A, RG,ext=1.6Ω | 4 | ||
| Gate to source charge | Qgs | 6.4 | nC | VDD=50V, ID=30A, VGS=0 to 10V | 4 | ||
| Gate charge at threshold | Qg(th) | 3.9 | nC | VDD=50V, ID=30A, VGS=0 to 10V | 4 | ||
| Gate to drain charge | Qgd | 4.1 | nC | VDD=50V, ID=30A, VGS=0 to 10V | 4 | ||
| Switching charge | Qsw | 6.5 | nC | VDD=50V, ID=30A, VGS=0 to 10V | 4 | ||
| Gate plateau voltage | Vplateau | 4.9 | V | VDD=50V, ID=30A, VGS=0 to 10V | 4 | ||
| Output charge | Qoss | 26 | nC | VDS=50V, VGS=0V | 4 | ||
| Reverse recovery time | trr | 26 | ns | VR=50V, IF=30A, diF/dt=500A/µs | 5 | ||
| Reverse recovery charge | Qrr | 135 | nC | VR=50V, IF=30A, diF/dt=500A/µs | 5 |
CAD (KiCad official)
- Symbol:
IPP129N10NF2SAKMA1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ipp129n10nf2sakma1-etched.step/ipp129n10nf2sakma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp129n10nf2sakma1.step/ipp129n10nf2sakma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
43fa2347c516359e, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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