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IPP111N15N3GXKSA1

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPP111N15N3GXKSA1

Infineon Technologies · MOSFETs · TO-220

IPP111N15N3GXKSA1 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin; gate-source voltage is rated at ±20 V maximum, with a typical gate threshold of 3 V (2 V min, 4 V max) at 160 µA.
2 D passive Drain pin, also connected to the tab; the device is rated for 150 V drain-source breakdown and 83 A continuous drain current at TC=25 °C.
3 S passive Source pin; the continuous diode forward current from source to drain is 83 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 150 V VGS=0 V, ID=1 mA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=160 µA 2
Zero gate voltage drain current IDSS 0.1 1 µA VDS=120 V, VGS=0 V, Tj=25 °C 2
Zero gate voltage drain current IDSS 10 100 µA VDS=120 V, VGS=0 V, Tj=125 °C 2
Gate-source leakage current IGSS 1 100 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 9.4 11.1 mW VGS=10 V, ID=83 A, (TO220; TO262) 2
Drain-source on-state resistance RDS(on) 9.5 11.3 mW VGS=8 V, ID=41 A, (TO220; TO262) 2
Transconductance gfs 47 94 S /VDS/>2/ID/RDS(on)max, ID=83 A 2
Gate charge total Qg 41 55 nC VDD=75 V, ID=83 A, VGS=0 to 10 V 3
Output charge Qoss 106 141 nC VDD=75 V, VGS=0 V 3
Diode continous forward current IS 83 A TC=25 °C 3
Diode pulse current IS,pulse 332 A TC=25 °C 3
Diode forward voltage VSD 1 1.2 V VGS=0 V, IF=83 A, Tj=25 °C 3
Thermal resistance, junction - case RthJC 0.7 K/W 2
Thermal resistance, junction - ambient RthJA 62 K/W minimal footprint 2
Thermal resistance, junction - ambient RthJA 40 K/W 6 cm2 cooling area 2
Continuous drain current ID 83 A TC=25 °C 1
Continuous drain current ID 59 A TC=100 °C 1
Pulsed drain current ID,pulse 332 A TC=25 °C 1
Avalanche energy, single pulse EAS 330 mJ ID=83 A, RGS=25 W 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 214 W TC=25 °C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Drain-source voltage VDS 150 V Product summary 1
Gate resistance RG 2.4 W 2
Input capacitance Ciss 3230 pF VGS=0 V, VDS=75 V, f=1 MHz 3
Output capacitance Coss 378 pF VGS=0 V, VDS=75 V, f=1 MHz 3
Reverse transfer capacitance Crss 7 pF VGS=0 V, VDS=75 V, f=1 MHz 3
Turn-on delay time td(on) 17 ns VDD=75 V, VGS=10 V, ID=83 A, RG=1.6 W 3
Rise time tr 35 ns VDD=75 V, VGS=10 V, ID=83 A, RG=1.6 W 3
Turn-off delay time td(off) 32 ns VDD=75 V, VGS=10 V, ID=83 A, RG=1.6 W 3
Fall time tf 9 ns VDD=75 V, VGS=10 V, ID=83 A, RG=1.6 W 3
Gate to source charge Qgs 18 nC VDD=75 V, ID=83 A, VGS=0 to 10 V 3
Gate to drain charge Qgd 7 nC VDD=75 V, ID=83 A, VGS=0 to 10 V 3
Switching charge Qsw 16 nC VDD=75 V, ID=83 A, VGS=0 to 10 V 3
Gate plateau voltage Vplateau 5.7 V VDD=75 V, ID=83 A, VGS=0 to 10 V 3
Reverse recovery time trr 132 ns VR=75 V, IF=IS, diF/dt=100 A/µs 3
Reverse recovery charge Qrr 415 nC VR=75 V, IF=IS, diF/dt=100 A/µs 3

CAD (KiCad official)

  • Symbol: IPP111N15N3GXKSA1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ipp111n15n3gxksa1-etched.step / ipp111n15n3gxksa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp111n15n3gxksa1.step / ipp111n15n3gxksa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 d8aa8de3033d5e6b, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF