component
IPP111N15N3GXKSA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPP111N15N3GXKSA1
Infineon Technologies · MOSFETs · TO-220
IPP111N15N3GXKSA1 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage is rated at ±20 V maximum, with a typical gate threshold of 3 V (2 V min, 4 V max) at 160 µA. |
| 2 | D | passive | Drain pin, also connected to the tab; the device is rated for 150 V drain-source breakdown and 83 A continuous drain current at TC=25 °C. |
| 3 | S | passive | Source pin; the continuous diode forward current from source to drain is 83 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 150 | V | VGS=0 V, ID=1 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=160 µA | 2 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=120 V, VGS=0 V, Tj=25 °C | 2 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=120 V, VGS=0 V, Tj=125 °C | 2 | |
| Gate-source leakage current | IGSS | 1 | 100 | nA | VGS=20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance | RDS(on) | 9.4 | 11.1 | mW | VGS=10 V, ID=83 A, (TO220; TO262) | 2 | |
| Drain-source on-state resistance | RDS(on) | 9.5 | 11.3 | mW | VGS=8 V, ID=41 A, (TO220; TO262) | 2 | |
| Transconductance | gfs | 47 | 94 | S | /VDS/>2/ID/RDS(on)max, ID=83 A | 2 | |
| Gate charge total | Qg | 41 | 55 | nC | VDD=75 V, ID=83 A, VGS=0 to 10 V | 3 | |
| Output charge | Qoss | 106 | 141 | nC | VDD=75 V, VGS=0 V | 3 | |
| Diode continous forward current | IS | 83 | A | TC=25 °C | 3 | ||
| Diode pulse current | IS,pulse | 332 | A | TC=25 °C | 3 | ||
| Diode forward voltage | VSD | 1 | 1.2 | V | VGS=0 V, IF=83 A, Tj=25 °C | 3 | |
| Thermal resistance, junction - case | RthJC | 0.7 | K/W | 2 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 40 | K/W | 6 cm2 cooling area | 2 | ||
| Continuous drain current | ID | 83 | A | TC=25 °C | 1 | ||
| Continuous drain current | ID | 59 | A | TC=100 °C | 1 | ||
| Pulsed drain current | ID,pulse | 332 | A | TC=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 330 | mJ | ID=83 A, RGS=25 W | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 214 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Drain-source voltage | VDS | 150 | V | Product summary | 1 | ||
| Gate resistance | RG | 2.4 | W | 2 | |||
| Input capacitance | Ciss | 3230 | pF | VGS=0 V, VDS=75 V, f=1 MHz | 3 | ||
| Output capacitance | Coss | 378 | pF | VGS=0 V, VDS=75 V, f=1 MHz | 3 | ||
| Reverse transfer capacitance | Crss | 7 | pF | VGS=0 V, VDS=75 V, f=1 MHz | 3 | ||
| Turn-on delay time | td(on) | 17 | ns | VDD=75 V, VGS=10 V, ID=83 A, RG=1.6 W | 3 | ||
| Rise time | tr | 35 | ns | VDD=75 V, VGS=10 V, ID=83 A, RG=1.6 W | 3 | ||
| Turn-off delay time | td(off) | 32 | ns | VDD=75 V, VGS=10 V, ID=83 A, RG=1.6 W | 3 | ||
| Fall time | tf | 9 | ns | VDD=75 V, VGS=10 V, ID=83 A, RG=1.6 W | 3 | ||
| Gate to source charge | Qgs | 18 | nC | VDD=75 V, ID=83 A, VGS=0 to 10 V | 3 | ||
| Gate to drain charge | Qgd | 7 | nC | VDD=75 V, ID=83 A, VGS=0 to 10 V | 3 | ||
| Switching charge | Qsw | 16 | nC | VDD=75 V, ID=83 A, VGS=0 to 10 V | 3 | ||
| Gate plateau voltage | Vplateau | 5.7 | V | VDD=75 V, ID=83 A, VGS=0 to 10 V | 3 | ||
| Reverse recovery time | trr | 132 | ns | VR=75 V, IF=IS, diF/dt=100 A/µs | 3 | ||
| Reverse recovery charge | Qrr | 415 | nC | VR=75 V, IF=IS, diF/dt=100 A/µs | 3 |
CAD (KiCad official)
- Symbol:
IPP111N15N3GXKSA1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ipp111n15n3gxksa1-etched.step/ipp111n15n3gxksa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp111n15n3gxksa1.step/ipp111n15n3gxksa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
d8aa8de3033d5e6b, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).