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IPP050N10NF2S

Infineon Technologies · MOSFETs · TO-220-3

IPP050N10NF2S from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal (Pin 1) of the PG-TO220-3 package, per the datasheet pin assignment.
2 Drain passive Drain terminal (Pin 2), which is electrically connected to the tab of the PG-TO220-3 package.
3 Source passive Source terminal (Pin 3) of the PG-TO220-3 package, per the datasheet pin assignment.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 110 A VGS=10V, TC=25°C 3
Continuous drain current ID 85 A VGS=10V, TC=100°C 3
Continuous drain current ID 78 A VGS=6V, TC=100°C 3
Continuous drain current ID 19.4 A VGS=10V, TA=25°C, RthJA=40°C/W 3
Pulsed drain current ID,pulse 440 A TA=25°C 3
Avalanche energy, single pulse EAS 100 mJ ID=80A, RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 150 W TC=25°C 3
Power dissipation Ptot 3.8 W TA=25°C, RthJA=40°C/W 3
Operating and storage temperature Tj,Tstg -55 175 °C 3
Thermal resistance, junction - case RthJC 1 °C/W 3
Thermal resistance, junction - ambient RthJA 40 °C/W 6 cm² cooling area 3
Thermal resistance, junction - ambient RthJA 62 °C/W minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=1mA 4
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS, ID=84µA 4
Zero gate voltage drain current IDSS 0.1 1 µA VDS=100V, VGS=0V, Tj=25°C 4
Zero gate voltage drain current IDSS 10 100 µA VDS=100V, VGS=0V, Tj=125°C 4
Gate-source leakage current IGSS 10 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 4.5 5 mΩ VGS=10V, ID=60A 4
Drain-source on-state resistance RDS(on) 5.4 6.2 mΩ VGS=6V, ID=30A 4
Transconductance gfs 57 S /VDS/≥2/ID/RDS(on)max, ID=60A 4
Gate resistance RG 1.7 Ω 4
Gate charge total Qg 51 76 nC VDD=50V, ID=60A, VGS=0 to 10V 4
Diode continuous forward current IS 94 A TC=25°C 5
Diode pulse current IS,pulse 440 A TC=25°C 5
Diode forward voltage VSD 0.92 1.2 V VGS=0V, IF=60A, Tj=25°C 5

CAD (KiCad official)

  • Symbol: IPP050N10NF2S
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp050n10nf2s-etched.step / ipp050n10nf2s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp050n10nf2s.step / ipp050n10nf2s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 816b6c497a4f0283, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF