component
IPP050N10NF2S
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPP050N10NF2S
Infineon Technologies · MOSFETs · TO-220-3
IPP050N10NF2S from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal (Pin 1) of the PG-TO220-3 package, per the datasheet pin assignment. |
| 2 | Drain | passive | Drain terminal (Pin 2), which is electrically connected to the tab of the PG-TO220-3 package. |
| 3 | Source | passive | Source terminal (Pin 3) of the PG-TO220-3 package, per the datasheet pin assignment. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 110 | A | VGS=10V, TC=25°C | 3 | ||
| Continuous drain current | ID | 85 | A | VGS=10V, TC=100°C | 3 | ||
| Continuous drain current | ID | 78 | A | VGS=6V, TC=100°C | 3 | ||
| Continuous drain current | ID | 19.4 | A | VGS=10V, TA=25°C, RthJA=40°C/W | 3 | ||
| Pulsed drain current | ID,pulse | 440 | A | TA=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 100 | mJ | ID=80A, RGS=25Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation | Ptot | 150 | W | TC=25°C | 3 | ||
| Power dissipation | Ptot | 3.8 | W | TA=25°C, RthJA=40°C/W | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 175 | °C | 3 | ||
| Thermal resistance, junction - case | RthJC | 1 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 40 | °C/W | 6 cm² cooling area | 3 | ||
| Thermal resistance, junction - ambient | RthJA | 62 | °C/W | minimal footprint | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=1mA | 4 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS, ID=84µA | 4 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=100V, VGS=0V, Tj=25°C | 4 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=100V, VGS=0V, Tj=125°C | 4 | |
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=20V, VDS=0V | 4 | |
| Drain-source on-state resistance | RDS(on) | 4.5 | 5 | mΩ | VGS=10V, ID=60A | 4 | |
| Drain-source on-state resistance | RDS(on) | 5.4 | 6.2 | mΩ | VGS=6V, ID=30A | 4 | |
| Transconductance | gfs | 57 | S | /VDS/≥2/ID/RDS(on)max, ID=60A | 4 | ||
| Gate resistance | RG | 1.7 | Ω | 4 | |||
| Gate charge total | Qg | 51 | 76 | nC | VDD=50V, ID=60A, VGS=0 to 10V | 4 | |
| Diode continuous forward current | IS | 94 | A | TC=25°C | 5 | ||
| Diode pulse current | IS,pulse | 440 | A | TC=25°C | 5 | ||
| Diode forward voltage | VSD | 0.92 | 1.2 | V | VGS=0V, IF=60A, Tj=25°C | 5 |
CAD (KiCad official)
- Symbol:
IPP050N10NF2S - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
ipp050n10nf2s-etched.step/ipp050n10nf2s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp050n10nf2s.step/ipp050n10nf2s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
816b6c497a4f0283, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).