component
IPP045N10N3G
Public Made by Adomby adom
UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IPP045N10N3G
UMW · MOSFETs · TO-220
IPP045N10N3G from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 100 V N-channel MOSFET; the gate-source voltage is rated at -20 V to 20 V in the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal of the MOSFET; continuous drain current is rated 137 A at TC=25°C and 105 A at TC=100°C. |
| 3 | S | passive | SOURCE terminal of the MOSFET, the reference for the gate-source voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 137 | A | TC=25°C | 1 | ||
| Continuous drain current | ID | 105 | A | TC=100°C | 1 | ||
| Pulsed drain current | ID,pulse | 548 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 340 | mJ | ID=100A, RGS=25Ω | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 214 | W | TC=25°C | 1 | ||
| Storage / operating junction temperature | TJ,TSTG | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction-case | RthJC | 0.7 | K/W | 2 | |||
| Thermal resistance, junction-ambient, minimal footprint | RthJA | 62 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction-ambient, 6 cm² cooling area | RthJA | 50 | K/W | 6 cm² cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=1mA | 3 | ||
| Gate threshold voltage | VGS(th) | 2 | 2.7 | 3.5 | V | VDS=VGS, ID=150µA | 3 |
| Zero gate voltage drain current (TJ=25°C) | IDSS | 0.1 | 1 | µA | VDS=100V, VGS=0V, TJ=25°C | 3 | |
| Zero gate voltage drain current (TJ=125°C) | IDSS | 100 | µA | VDS=100V, VGS=0V, TJ=125°C | 3 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V | 3 | ||
| Drain-source on-state resistance | RDS(ON) | 3.9 | 4.5 | mΩ | VGS=10V, ID=100A | 3 | |
| Drain-source on-state resistance | RDS(ON) | 4.7 | 7.7 | mΩ | VGS=6V, ID=50A | 3 | |
| Transconductance | gFS | 73 | 145 | S | /VDS/>2/ID/RDS(ON)max, ID=100 A | 3 | |
| Input capacitance | Ciss | 6320 | 8410 | pF | VGS=0V, VDS=50V, f=1MHz | 3 | |
| Output capacitance | Coss | 1210 | 1610 | pF | VGS=0V, VDS=50V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 41 | pF | VGS=0V, VDS=50V, f=1MHz | 3 | ||
| Gate resistance | RG | 1.4 | Ω | 3 | |||
| Turn-on delay time | tD(on) | 27 | ns | 3 | |||
| Rise time | tr | 59 | ns | 3 | |||
| Turn-off delay time | tD(off) | 48 | ns | 3 | |||
| Fall time | tf | 14 | ns | 3 | |||
| Gate to source charge | Qgs | 30 | nC | VDD=50V, ID=100A | 3 | ||
| Gate to drain charge | Qgd | 16 | nC | VDD=50V, ID=100A | 3 | ||
| Switching charge | QSW | 27 | nC | VDD=50V, ID=100A | 3 | ||
| Gate charge total | Qg | 88 | nC | VGS=0 to 10V | 3 | ||
| Gate plateau voltage | VpIateau | 4.7 | V | 3 | |||
| Output charge | Qoss | 122 | nC | VDD=50V, VGS=0V | 3 | ||
| Diode continuous forward current | IS | 137 | A | TC=25°C | 4 | ||
| Diode pulse current | IS,pulse | 548 | A | TC=25°C | 4 | ||
| Diode forward voltage | VSD | 1 | 1.2 | V | VGS=0V, IF=100A, TJ=25°C | 4 | |
| Reverse recovery time | trr | 68 | ns | VR=50V, IF=IS, diF/dt=100A/μs | 4 | ||
| Reverse recovery charge | Qrr | 135 | nC | VR=50V, IF=IS, diF/dt=100A/μs | 4 |
CAD (KiCad official)
- Symbol:
IPP045N10N3G - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ipp045n10n3g-etched.step/ipp045n10n3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipp045n10n3g.step/ipp045n10n3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
ea892ebbc1c3b847, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPP045N10N3G
**UMW** · MOSFETs · TO-220
IPP045N10N3G from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 100 V N-channel MOSFET; the gate-source voltage is rated at -20 V to 20 V in the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal of the MOSFET; continuous drain current is rated 137 A at TC=25°C and 105 A at TC=100°C. |
| 3 | S | passive | SOURCE terminal of the MOSFET, the reference for the gate-source voltage. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | | | 137 | A | TC=25°C | 1 |
| Continuous drain current | ID | | | 105 | A | TC=100°C | 1 |
| Pulsed drain current | ID,pulse | | | 548 | A | TC=25°C | 1 |
| Avalanche energy, single pulse | EAS | | | 340 | mJ | ID=100A, RGS=25Ω | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Power dissipation | Ptot | | | 214 | W | TC=25°C | 1 |
| Storage / operating junction temperature | TJ,TSTG | -55 | | 175 | °C | | 1 |
| Thermal resistance, junction-case | RthJC | | | 0.7 | K/W | | 2 |
| Thermal resistance, junction-ambient, minimal footprint | RthJA | | | 62 | K/W | minimal footprint | 2 |
| Thermal resistance, junction-ambient, 6 cm² cooling area | RthJA | | | 50 | K/W | 6 cm² cooling area | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | VGS=0V, ID=1mA | 3 |
| Gate threshold voltage | VGS(th) | 2 | 2.7 | 3.5 | V | VDS=VGS, ID=150µA | 3 |
| Zero gate voltage drain current (TJ=25°C) | IDSS | | 0.1 | 1 | µA | VDS=100V, VGS=0V, TJ=25°C | 3 |
| Zero gate voltage drain current (TJ=125°C) | IDSS | | | 100 | µA | VDS=100V, VGS=0V, TJ=125°C | 3 |
| Gate-source leakage current | IGSS | | | 100 | nA | VGS=20V, VDS=0V | 3 |
| Drain-source on-state resistance | RDS(ON) | | 3.9 | 4.5 | mΩ | VGS=10V, ID=100A | 3 |
| Drain-source on-state resistance | RDS(ON) | | 4.7 | 7.7 | mΩ | VGS=6V, ID=50A | 3 |
| Transconductance | gFS | 73 | 145 | | S | /VDS/>2/ID/RDS(ON)max, ID=100 A | 3 |
| Input capacitance | Ciss | | 6320 | 8410 | pF | VGS=0V, VDS=50V, f=1MHz | 3 |
| Output capacitance | Coss | | 1210 | 1610 | pF | VGS=0V, VDS=50V, f=1MHz | 3 |
| Reverse transfer capacitance | Crss | | 41 | | pF | VGS=0V, VDS=50V, f=1MHz | 3 |
| Gate resistance | RG | | 1.4 | | Ω | | 3 |
| Turn-on delay time | tD(on) | | 27 | | ns | | 3 |
| Rise time | tr | | 59 | | ns | | 3 |
| Turn-off delay time | tD(off) | | 48 | | ns | | 3 |
| Fall time | tf | | 14 | | ns | | 3 |
| Gate to source charge | Qgs | | 30 | | nC | VDD=50V, ID=100A | 3 |
| Gate to drain charge | Qgd | | 16 | | nC | VDD=50V, ID=100A | 3 |
| Switching charge | QSW | | 27 | | nC | VDD=50V, ID=100A | 3 |
| Gate charge total | Qg | | 88 | | nC | VGS=0 to 10V | 3 |
| Gate plateau voltage | VpIateau | | 4.7 | | V | | 3 |
| Output charge | Qoss | | 122 | | nC | VDD=50V, VGS=0V | 3 |
| Diode continuous forward current | IS | | | 137 | A | TC=25°C | 4 |
| Diode pulse current | IS,pulse | | | 548 | A | TC=25°C | 4 |
| Diode forward voltage | VSD | | 1 | 1.2 | V | VGS=0V, IF=100A, TJ=25°C | 4 |
| Reverse recovery time | trr | | 68 | | ns | VR=50V, IF=IS, diF/dt=100A/μs | 4 |
| Reverse recovery charge | Qrr | | 135 | | nC | VR=50V, IF=IS, diF/dt=100A/μs | 4 |
## CAD (KiCad official)
- Symbol: `IPP045N10N3G`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `ipp045n10n3g-etched.step` / `ipp045n10n3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipp045n10n3g.step` / `ipp045n10n3g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8778758884486610944) (12 pp, sha256 `ea892ebbc1c3b847`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipp045n10n3g-datasheet.pdf)