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IPP045N10N3G

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UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPP045N10N3G

UMW · MOSFETs · TO-220

IPP045N10N3G from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 100 V N-channel MOSFET; the gate-source voltage is rated at -20 V to 20 V in the absolute maximum ratings.
2 D passive DRAIN terminal of the MOSFET; continuous drain current is rated 137 A at TC=25°C and 105 A at TC=100°C.
3 S passive SOURCE terminal of the MOSFET, the reference for the gate-source voltage.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 137 A TC=25°C 1
Continuous drain current ID 105 A TC=100°C 1
Pulsed drain current ID,pulse 548 A TC=25°C 1
Avalanche energy, single pulse EAS 340 mJ ID=100A, RGS=25Ω 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 214 W TC=25°C 1
Storage / operating junction temperature TJ,TSTG -55 175 °C 1
Thermal resistance, junction-case RthJC 0.7 K/W 2
Thermal resistance, junction-ambient, minimal footprint RthJA 62 K/W minimal footprint 2
Thermal resistance, junction-ambient, 6 cm² cooling area RthJA 50 K/W 6 cm² cooling area 2
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=1mA 3
Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS, ID=150µA 3
Zero gate voltage drain current (TJ=25°C) IDSS 0.1 1 µA VDS=100V, VGS=0V, TJ=25°C 3
Zero gate voltage drain current (TJ=125°C) IDSS 100 µA VDS=100V, VGS=0V, TJ=125°C 3
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 3
Drain-source on-state resistance RDS(ON) 3.9 4.5 mΩ VGS=10V, ID=100A 3
Drain-source on-state resistance RDS(ON) 4.7 7.7 mΩ VGS=6V, ID=50A 3
Transconductance gFS 73 145 S /VDS/>2/ID/RDS(ON)max, ID=100 A 3
Input capacitance Ciss 6320 8410 pF VGS=0V, VDS=50V, f=1MHz 3
Output capacitance Coss 1210 1610 pF VGS=0V, VDS=50V, f=1MHz 3
Reverse transfer capacitance Crss 41 pF VGS=0V, VDS=50V, f=1MHz 3
Gate resistance RG 1.4 Ω 3
Turn-on delay time tD(on) 27 ns 3
Rise time tr 59 ns 3
Turn-off delay time tD(off) 48 ns 3
Fall time tf 14 ns 3
Gate to source charge Qgs 30 nC VDD=50V, ID=100A 3
Gate to drain charge Qgd 16 nC VDD=50V, ID=100A 3
Switching charge QSW 27 nC VDD=50V, ID=100A 3
Gate charge total Qg 88 nC VGS=0 to 10V 3
Gate plateau voltage VpIateau 4.7 V 3
Output charge Qoss 122 nC VDD=50V, VGS=0V 3
Diode continuous forward current IS 137 A TC=25°C 4
Diode pulse current IS,pulse 548 A TC=25°C 4
Diode forward voltage VSD 1 1.2 V VGS=0V, IF=100A, TJ=25°C 4
Reverse recovery time trr 68 ns VR=50V, IF=IS, diF/dt=100A/μs 4
Reverse recovery charge Qrr 135 nC VR=50V, IF=IS, diF/dt=100A/μs 4

CAD (KiCad official)

  • Symbol: IPP045N10N3G
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ipp045n10n3g-etched.step / ipp045n10n3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp045n10n3g.step / ipp045n10n3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 ea892ebbc1c3b847, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF