IPP040N08NF2S

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  "title": "IPP040N08NF2S",
  "brief": "Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "IPP040N08NF2S",
    "manufacturer": "Infineon Technologies",
    "package": "TO-220-3",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/1ed39287a6ba57e05a21c653b2e8c017.pdf",
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      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET, with the datasheet's gate-source voltage limit of -20 V to 20 V (Table 2)."
      },
      {
        "number": "2",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal, electrically connected to the tab; the datasheet rates the drain at 80 V drain-source breakdown minimum and 115 A continuous drain current at VGS = 10 V, TC = 25 °C."
      },
      {
        "number": "3",
        "name": "Source",
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  "metadata": {
    "specs": {
      "Manufacturer": "Infineon Technologies",
      "Package": "TO-220-3",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "3"
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          "name": "Continuous drain current (VGS=10V, TC=25°C)",
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          "name": "Power dissipation (TC=25°C)",
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          "name": "Operating and storage temperature",
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          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
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          "max": 175,
          "conditions": "IEC climatic category; DIN IEC 68-1: 55/175/56",
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        {
          "name": "Thermal resistance, junction - case",
          "symbol": "RthJC",
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          "name": "Drain-source breakdown voltage",
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          "name": "Gate charge total",
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          "conditions": "TC=25°C",
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          "name": "Diode pulse current",
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          "name": "Diode forward voltage",
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          "conditions": "VGS=0V,IF=80A,Tj=25°C",
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