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IPP040N08NF2S

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Infineon Technologies MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPP040N08NF2S

Infineon Technologies · MOSFETs · TO-220-3

IPP040N08NF2S from Infineon Technologies, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with the datasheet's gate-source voltage limit of -20 V to 20 V (Table 2).
2 Drain passive Drain terminal, electrically connected to the tab; the datasheet rates the drain at 80 V drain-source breakdown minimum and 115 A continuous drain current at VGS = 10 V, TC = 25 °C.
3 Source passive Source terminal of the MOSFET; the datasheet gives no source-specific electrical limit beyond the device ratings.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (VGS=10V, TC=25°C) ID 115 A VGS=10V,TC=25°C 3
Continuous drain current (VGS=10V, TC=100°C) ID 88 A VGS=10V,TC=100°C 3
Continuous drain current (VGS=6V, TC=100°C) ID 83 A VGS=6V,TC=100°C 3
Continuous drain current (VGS=10V, TA=25°C, RthJA=40°C/W) ID 22 A VGS=10V,TA=25°C,RthJA=40°C/W 3
Pulsed drain current ID,pulse 460 A TA=25°C 3
Avalanche energy, single pulse EAS 119 mJ ID=95A,RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation (TC=25°C) Ptot 150 W TC=25°C 3
Power dissipation (TA=25°C, RthJA=40°C/W) Ptot 3.8 W TA=25°C,RthJA=40°C/W 3
Operating and storage temperature Tj,Tstg -55 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3
Thermal resistance, junction - case RthJC 1 °C/W 3
Thermal resistance, junction - ambient, 6 cm² cooling area RthJA 40 °C/W 6 cm² cooling area 3
Thermal resistance, junction - ambient, minimal footprint RthJA 62 °C/W minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 80 V VGS=0V,ID=1mA 4
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS,ID=85µA 4
Zero gate voltage drain current (Tj=25°C) IDSS 0.1 1 µA VDS=80V,VGS=0V,Tj=25°C 4
Zero gate voltage drain current (Tj=125°C) IDSS 10 100 µA VDS=80V,VGS=0V,Tj=125°C 4
Gate-source leakage current IGSS 10 100 nA VGS=20V,VDS=0V 4
Drain-source on-state resistance (VGS=10V) RDS(on) 3.6 4 mΩ VGS=10V,ID=80A 4
Drain-source on-state resistance (VGS=6V) RDS(on) 4.5 5.6 mΩ VGS=6V,ID=40A 4
Transconductance gfs 63 S /VDS/≥2/ID/RDS(on)max,ID=80A 4
Gate charge total Qg 54 81 nC VDD=40V,ID=80A,VGS=0to10V 4
Diode continuous forward current IS 94 A TC=25°C 5
Diode pulse current IS,pulse 460 A TC=25°C 5
Diode forward voltage VSD 0.95 1.2 V VGS=0V,IF=80A,Tj=25°C 5

CAD (KiCad official)

  • Symbol: IPP040N08NF2S
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: ipp040n08nf2s-etched.step / ipp040n08nf2s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipp040n08nf2s.step / ipp040n08nf2s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 75eb73f16da47ec3, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF