component
IPN95R3K7P7ATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427428429430431432433434435436437438439440441442443444445446447448449450451452453454455456457458459460461462463464465466467468469470471472473474475476477478479480481482483484485486487488489490491492493494495496497498499500501502503504505506507508509510511512513514515516517518519520521522523
{
"schema_version": 1,
"type": "component",
"slug": "ipn95r3k7p7atma1",
"title": "IPN95R3K7P7ATMA1",
"brief": "Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"triode-mos tube-transistor",
"ipn95r3k7p7atma1",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "IPN95R3K7P7ATMA1",
"manufacturer": "Infineon Technologies",
"package": "SOT-223",
"pin_count": 3,
"category": "Triode/MOS Tube/Transistor",
"subcategory": "MOSFETs",
"datasheet": "https://datasheet.lcsc.com/datasheet/pdf/87c997125693b96e73c53553bca6edc5.pdf",
"parts": {
"symbol": "ipn95r3k7p7atma1.kicad_sym",
"footprint": "ipn95r3k7p7atma1.kicad_mod",
"model_3d": "ipn95r3k7p7atma1-hero.glb",
"model_3d_plain": "ipn95r3k7p7atma1-etched.glb",
"model_3d_step": "ipn95r3k7p7atma1-etched.step",
"model_3d_step_plain": "ipn95r3k7p7atma1.step",
"lbr": "ipn95r3k7p7atma1.lbr"
},
"distributor_links": {
"lcsc": "C3278582"
},
"distributor_check": {
"checked_at": "2026-10-22T21:54:43Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "Gate",
"type": "input",
"description": "Gate of the 950V CoolMOS P7 MOSFET with integrated Zener ESD protection diode; VGS rated ±20V static and ±30V dynamic, V(GS)th 2.5V to 3.5V."
},
{
"number": "2",
"name": "Drain",
"type": "passive",
"description": "Drain of the MOSFET with internal body diode to source; VDS 950V minimum breakdown, continuous ID 2A at TC=25°C."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source of the MOSFET, with the internal body diode (continuous forward current IS 0.8A at TC=25°C) connected between source and drain."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-sonnet-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet pin diagram shows only 3 pins (Gate 1, Drain 2, Source 3). The PG-SOT223 outline on pa; Drain and source are typed passive as the usual KiCad convention for MOSFET power terminals. The dat"
],
"pages_sent": 14,
"cost_usd": 0.0896,
"at": "2026-10-22T21:54:22"
},
"datasheet": {
"url": "https://datasheet.lcsc.com/datasheet/pdf/87c997125693b96e73c53553bca6edc5.pdf",
"pages": 14,
"sha256": "9c0ee9333f24c319",
"source_tier": "mfr"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "ipn95r3k7p7atma1.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
7,
6.5,
1.7
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "77ad6dbacc493cb619c728f26d2ddcf461eb0feb6b977b47d01d51e67016f654",
"checked": "2026-10-22",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "ipn95r3k7p7atma1-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
7,
6.5,
1.7
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "482fc6feacbb2f977228d421e0e0d91949584cddef3a7ef271515a9973ee3b24",
"checked": "2026-10-22",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "Infineon Technologies",
"Package": "SOT-223",
"Category": "Triode/MOS Tube/Transistor",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "9c0ee9333f24c319aa8bd604ea71365c9949f484d9e06194a9d48d37491c3ecd",
"rows": [
{
"name": "Continuous drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 2,
"conditions": "TC=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Continuous drain current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 1.4,
"conditions": "TC=100°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Pulsed drain current",
"symbol": "ID,pulse",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 5,
"conditions": "TC=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Avalanche energy, single pulse",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 2,
"conditions": "ID=0.2A; VDD=50V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Avalanche energy, repetitive",
"symbol": "EAR",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 0.04,
"conditions": "ID=0.2A; VDD=50V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "MOSFET dv/dt ruggedness",
"symbol": "dv/dt",
"kind": "absolute_maximum",
"unit": "V/ns",
"min": null,
"typ": null,
"max": 100,
"conditions": "VDS=0...400V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate source voltage (static)",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "static",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate source voltage (dynamic)",
"symbol": "VGS",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": 30,
"conditions": "AC (f>1 Hz)",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Power dissipation",
"symbol": "Ptot",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 6,
"conditions": "TC=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Storage temperature",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Operating junction temperature",
"symbol": "Tj",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Continuous diode forward current",
"symbol": "IS",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 0.8,
"conditions": "TC=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Diode pulse current",
"symbol": "IS,pulse",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 5,
"conditions": "TC=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Reverse diode dv/dt",
"symbol": "dv/dt",
"kind": "absolute_maximum",
"unit": "V/ns",
"min": null,
"typ": null,
"max": 1,
"conditions": "VDS=0...400V,ISD<=0.4A,Tj=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Maximum diode commutation speed",
"symbol": "diF/dt",
"kind": "absolute_maximum",
"unit": "A/µs",
"min": null,
"typ": null,
"max": 50,
"conditions": "VDS=0...400V,ISD<=0.4A,Tj=25°C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Thermal resistance, junction - case",
"symbol": "RthJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 19.8,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Thermal resistance, junction - ambient",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 160,
"conditions": "device on PCB, minimal footprint",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Thermal resistance, junction - ambient for SMD version",
"symbol": "RthJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": 35,
"max": 75,
"conditions": "Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² copper area",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Soldering temperature",
"symbol": "Tsold",
"kind": "thermal",
"unit": "°C",
"min": null,
"typ": null,
"max": 260,
"conditions": "reflow MSL1",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Drain-source breakdown voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 950,
"typ": null,
"max": null,
"conditions": "VGS=0V,ID=1mA",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate threshold voltage",
"symbol": "V(GS)th",
"kind": "electrical",
"unit": "V",
"min": 2.5,
"typ": 3,
"max": 3.5,
"conditions": "VDS=VGS,ID=0.04mA",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": 1,
"max": null,
"conditions": "VDS=950V,VGS=0V,Tj=25°C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": 10,
"max": null,
"conditions": "VDS=950V,VGS=0V,Tj=150°C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate-source leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": null,
"max": 1000,
"conditions": "VGS=20V,VDS=0V",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Drain-source on-state resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 3.11,
"max": 3.7,
"conditions": "VGS=10V,ID=0.8A,Tj=25°C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Drain-source on-state resistance",
"symbol": "RDS(on)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 6.86,
"max": null,
"conditions": "VGS=10V,ID=0.8A,Tj=150°C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate resistance",
"symbol": "RG",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 1.5,
"max": null,
"conditions": "f=250kHz,open drain",
"source_page": 5,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"ipn95r3k7p7atma1"
],
"discovery_pitch": "IPN95R3K7P7ATMA1 (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"ipn95r3k7p7atma1.kicad_sym",
"ipn95r3k7p7atma1.kicad_mod",
"ipn95r3k7p7atma1.glb",
"ipn95r3k7p7atma1.step",
"ipn95r3k7p7atma1.lbr",
"docs/hero.png",
"docs/ipn95r3k7p7atma1-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"ipn95r3k7p7atma1-hero.glb",
"ipn95r3k7p7atma1-hero.overlay.json",
"ipn95r3k7p7atma1-etched.glb"
],
"visibility": {
"public": true
}
}