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IPN95R3K7P7ATMA1

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Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPN95R3K7P7ATMA1

Infineon Technologies · MOSFETs · SOT-223

IPN95R3K7P7ATMA1 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the 950V CoolMOS P7 MOSFET with integrated Zener ESD protection diode; VGS rated ±20V static and ±30V dynamic, V(GS)th 2.5V to 3.5V.
2 Drain passive Drain of the MOSFET with internal body diode to source; VDS 950V minimum breakdown, continuous ID 2A at TC=25°C.
3 Source passive Source of the MOSFET, with the internal body diode (continuous forward current IS 0.8A at TC=25°C) connected between source and drain.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 2 A TC=25°C 3
Continuous drain current ID 1.4 A TC=100°C 3
Pulsed drain current ID,pulse 5 A TC=25°C 3
Avalanche energy, single pulse EAS 2 mJ ID=0.2A; VDD=50V 3
Avalanche energy, repetitive EAR 0.04 mJ ID=0.2A; VDD=50V 3
MOSFET dv/dt ruggedness dv/dt 100 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 6 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Continuous diode forward current IS 0.8 A TC=25°C 3
Diode pulse current IS,pulse 5 A TC=25°C 3
Reverse diode dv/dt dv/dt 1 V/ns VDS=0...400V,ISD<=0.4A,Tj=25°C 3
Maximum diode commutation speed diF/dt 50 A/µs VDS=0...400V,ISD<=0.4A,Tj=25°C 3
Thermal resistance, junction - case RthJC 19.8 °C/W 4
Thermal resistance, junction - ambient RthJA 160 °C/W device on PCB, minimal footprint 4
Thermal resistance, junction - ambient for SMD version RthJA 35 75 °C/W Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² copper area 4
Soldering temperature Tsold 260 °C reflow MSL1 4
Drain-source breakdown voltage V(BR)DSS 950 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.04mA 5
Zero gate voltage drain current IDSS 1 µA VDS=950V,VGS=0V,Tj=25°C 5
Zero gate voltage drain current IDSS 10 µA VDS=950V,VGS=0V,Tj=150°C 5
Gate-source leakage current IGSS 1000 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance RDS(on) 3.11 3.7 Ω VGS=10V,ID=0.8A,Tj=25°C 5
Drain-source on-state resistance RDS(on) 6.86 Ω VGS=10V,ID=0.8A,Tj=150°C 5
Gate resistance RG 1.5 Ω f=250kHz,open drain 5

CAD (KiCad official)

  • Symbol: IPN95R3K7P7ATMA1
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ipn95r3k7p7atma1-etched.step / ipn95r3k7p7atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipn95r3k7p7atma1.step / ipn95r3k7p7atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 9c0ee9333f24c319, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF