main
Ray Set visibility: public 595ff4e 10d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "ipn80r2k4p7atma1",
  "title": "IPN80R2K4P7ATMA1",
  "brief": "Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "IPN80R2K4P7ATMA1",
    "manufacturer": "Infineon Technologies",
    "package": "SOT-223",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/75fc5a4ac2a7fc46988835254b8ef401.pdf",
    "parts": {
      "symbol": "ipn80r2k4p7atma1.kicad_sym",
      "footprint": "ipn80r2k4p7atma1.kicad_mod",
      "model_3d": "ipn80r2k4p7atma1-hero.glb",
      "model_3d_plain": "ipn80r2k4p7atma1-etched.glb",
      "model_3d_step": "ipn80r2k4p7atma1-etched.step",
      "model_3d_step_plain": "ipn80r2k4p7atma1.step",
      "lbr": "ipn80r2k4p7atma1.lbr"
    },
    "distributor_links": {
      "lcsc": "C3278577",
      "digikey": "IPN80R2K4P7ATMA1TR-ND",
      "mouser": "726-IPN80R2K4P7ATMA1"
    },
    "distributor_check": {
      "checked_at": "2026-10-28T17:14:47Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "IPN80R2K4P7ATMA1TR-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "726-IPN80R2K4P7ATMA1",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate of the MOSFET; the static gate-source voltage is limited to -20 V to 20 V and AC (f>1 Hz) to -30 V to 30 V (Table 2)."
      },
      {
        "number": "2",
        "name": "Drain",
        "type": "passive",
        "description": "Drain of the MOSFET, also connected to the tab; drain-source breakdown voltage is 800 V minimum at VGS=0 V and ID=1 mA, with continuous drain current of 2.5 A at TC=25°C (Tables 2 and 4)."
      },
      {
        "number": "3",
        "name": "Source",
        "type": "passive",
        "description": "Source of the MOSFET; the datasheet gives no pin-specific limit for this terminal beyond the device-level ratings in Table 2."
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The front page says the drain is on pin 2 and the tab, but the tab is not given a printed pin number; The MPN suffix 'ATMA1' (IPN80R2K4P7ATMA1) does not appear in the datasheet. The datasheet only lists; The datasheet gives no source-specific limits, so the source description only refers to device-level"
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        "at": "2026-10-28T17:14:39"
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        "pages": 13,
        "sha256": "f2337f2dc08b5650",
        "source_tier": "mfr"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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        "seat": "z = 0",
        "extents_mm": [
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        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "77ad6dbacc493cb619c728f26d2ddcf461eb0feb6b977b47d01d51e67016f654",
        "checked": "2026-10-28",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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  "metadata": {
    "specs": {
      "Manufacturer": "Infineon Technologies",
      "Package": "SOT-223",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "f2337f2dc08b5650d037ec2f623f3a1585246070a6b648168e77832374642fac",
      "rows": [
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          "name": "Continuous drain current (TC=25°C)",
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          "max": 2.5,
          "conditions": "TC=25°C",
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          "name": "Continuous drain current (TC=100°C)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
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          "max": 1.7,
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        },
        {
          "name": "Pulsed drain current",
          "symbol": "ID,pulse",
          "kind": "absolute_maximum",
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          "min": null,
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          "max": 5.3,
          "conditions": "TC=25°C",
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        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 4,
          "conditions": "ID=0.3A; VDD=50V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, repetitive",
          "symbol": "EAR",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 0.04,
          "conditions": "ID=0.3A; VDD=50V",
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        },
        {
          "name": "Avalanche current, repetitive",
          "symbol": "IAR",
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        },
        {
          "name": "MOSFET dv/dt ruggedness",
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          "conditions": "VDS=0 to 400V",
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        },
        {
          "name": "Gate source voltage, static",
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          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "static",
          "source_page": 3,
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        },
        {
          "name": "Gate source voltage, AC",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "AC (f>1 Hz)",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 6.3,
          "conditions": "TC=25°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Operating and storage temperature",
          "symbol": "Tj,Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Continuous diode forward current",
          "symbol": "IS",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "TC=25°C",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Diode pulse current",
          "symbol": "IS,pulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 5,
          "conditions": "TC=25°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Reverse diode dv/dt",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=0 to 400V, ISD<=0.4A, Tj=25°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Maximum diode commutation speed",
          "symbol": "dif/dt",
          "kind": "absolute_maximum",
          "unit": "A/µs",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VDS=0 to 400V, ISD<=0.4A, Tj=25°C",
          "source_page": 3,
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        },
        {
          "name": "Thermal resistance, junction - solder point",
          "symbol": "RthJS",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
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          "max": 19.8,
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        {
          "name": "Thermal resistance, junction - ambient (minimal footprint)",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 160,
          "conditions": "Device on PCB, minimal footprint",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Thermal resistance, junction - ambient (soldered on copper area)",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 75,
          "conditions": "Device on 40x40x1.5 mm FR4 PCB, 6 cm² copper area, vertical, no air stream",
          "source_page": 3,
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        {
          "name": "Soldering temperature, wave and reflow",
          "symbol": "Tsold",
          "kind": "absolute_maximum",
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          "min": null,
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          "max": 260,
          "conditions": "reflow MSL1",
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        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 800,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=1mA",
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        {
          "name": "Gate threshold voltage",
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          "name": "Zero gate voltage drain current (Tj=25°C)",
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          "max": 10,
          "conditions": "VDS=800V, VGS=0V, Tj=25°C",
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          "name": "Zero gate voltage drain current (Tj=150°C)",
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          "conditions": "VDS=800V, VGS=0V, Tj=150°C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate-source leakage current incl. zener diode",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VGS=20V, VDS=0V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance (Tj=25°C)",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 2,
          "max": 2.4,
          "conditions": "VGS=10V, ID=0.8A, Tj=25°C",
          "source_page": 4,
          "source": "datasheet"
        }
      ]
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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