component
IPN80R2K4P7ATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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IPN80R2K4P7ATMA1
Infineon Technologies · MOSFETs · SOT-223
IPN80R2K4P7ATMA1 from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the MOSFET; the static gate-source voltage is limited to -20 V to 20 V and AC (f>1 Hz) to -30 V to 30 V (Table 2). |
| 2 | Drain | passive | Drain of the MOSFET, also connected to the tab; drain-source breakdown voltage is 800 V minimum at VGS=0 V and ID=1 mA, with continuous drain current of 2.5 A at TC=25°C (Tables 2 and 4). |
| 3 | Source | passive | Source of the MOSFET; the datasheet gives no pin-specific limit for this terminal beyond the device-level ratings in Table 2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | 2.5 | A | TC=25°C | 3 | ||
| Continuous drain current (TC=100°C) | ID | 1.7 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 5.3 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 4 | mJ | ID=0.3A; VDD=50V | 3 | ||
| Avalanche energy, repetitive | EAR | 0.04 | mJ | ID=0.3A; VDD=50V | 3 | ||
| Avalanche current, repetitive | IAR | 0.3 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 100 | V/ns | VDS=0 to 400V | 3 | ||
| Gate source voltage, static | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage, AC | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 6.3 | W | TC=25°C | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 1 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 5 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 1 | V/ns | VDS=0 to 400V, ISD<=0.4A, Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 50 | A/µs | VDS=0 to 400V, ISD<=0.4A, Tj=25°C | 3 | ||
| Thermal resistance, junction - solder point | RthJS | 19.8 | °C/W | 3 | |||
| Thermal resistance, junction - ambient (minimal footprint) | RthJA | 160 | °C/W | Device on PCB, minimal footprint | 3 | ||
| Thermal resistance, junction - ambient (soldered on copper area) | RthJA | 75 | °C/W | Device on 40x40x1.5 mm FR4 PCB, 6 cm² copper area, vertical, no air stream | 3 | ||
| Soldering temperature, wave and reflow | Tsold | 260 | °C | reflow MSL1 | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 800 | V | VGS=0V, ID=1mA | 4 | ||
| Gate threshold voltage | VGS(th) | 2.5 | 3 | 3.5 | V | VDS=VGS, ID=0.04mA | 4 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | 10 | µA | VDS=800V, VGS=0V, Tj=25°C | 4 | ||
| Zero gate voltage drain current (Tj=150°C) | IDSS | 1 | µA | VDS=800V, VGS=0V, Tj=150°C | 4 | ||
| Gate-source leakage current incl. zener diode | IGSS | 1 | µA | VGS=20V, VDS=0V | 4 | ||
| Drain-source on-state resistance (Tj=25°C) | RDS(on) | 2 | 2.4 | Ω | VGS=10V, ID=0.8A, Tj=25°C | 4 |
CAD (KiCad official)
- Symbol:
IPN80R2K4P7ATMA1 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
ipn80r2k4p7atma1-etched.step/ipn80r2k4p7atma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipn80r2k4p7atma1.step/ipn80r2k4p7atma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
f2337f2dc08b5650, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).