component
IPN60R600P7S
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| ipn60r600p7s-etched.glb | 17d ago |
| ipn60r600p7s-etched.step | 17d ago |
| ipn60r600p7s-hero.glb | 17d ago |
| ipn60r600p7s-hero.overlay.json | 17d ago |
| ipn60r600p7s.glb | 17d ago |
| ipn60r600p7s.kicad_mod | 17d ago |
| ipn60r600p7s.kicad_sym | 17d ago |
| ipn60r600p7s.lbr | 17d ago |
| ipn60r600p7s.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
IPN60R600P7S
Infineon Technologies · MOSFETs · SOT-223
IPN60R600P7S from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the 600 V CoolMOS P7 MOSFET; static gate-source voltage is limited to -20 V to 20 V and dynamic (AC, f>1 Hz) to -30 V to 30 V, with an integrated gate resistance of 6.3 Ω typical. |
| 2 | Drain | passive | Drain of the MOSFET, also connected to the tab; drain-source breakdown voltage is 600 V minimum and continuous drain current is 6 A at TC=25°C. |
| 3 | Source | passive | Source of the MOSFET; the reference terminal for gate-source voltage and drain current ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | 6 | A | TC=25°C | 3 | ||
| Continuous drain current (TC=100°C) | ID | 4 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 16 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 17 | mJ | ID=1.60A; VDD=50V; see table 10 | 3 | ||
| Avalanche energy, repetitive | EAR | 0.08 | mJ | ID=1.60A; VDD=50V; see table 10 | 3 | ||
| Avalanche current, single pulse | IAS | 1.6 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 80 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static; | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 7 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -40 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 6 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 16 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 50 | V/ns | VDS=0...400V,ISD<=6A,Tj=25°C | 3 | ||
| Maximum diode commutation speed | dif/dt | 900 | A/µs | VDS=0...400V,ISD<=6A,Tj=25°C | 3 | ||
| Thermal resistance, junction - solder point | RthJS | 18.21 | °C/W | 4 | |||
| Thermal resistance, junction - ambient | RthJA | 160 | °C/W | device on PCB, minimal footprint | 4 | ||
| Thermal resistance, junction - ambient for SMD version | RthJA | 35 | 75 | °C/W | Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling; PCB vertical without air stream cooling | 4 | |
| Soldering temperature, wave soldering only allowed at leads | Tsold | 260 | °C | reflow MSL1 | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V,ID=1mA | 5 | ||
| Gate threshold voltage | V(GS)th | 3 | 3.5 | 4 | V | VDS=VGS,ID=0.08mA | 5 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | 1 | µA | VDS=600,VGS=0V,Tj=25°C | 5 | ||
| Drain-source on-state resistance (Tj=25°C) | RDS(on) | 0.49 | 0.6 | Ω | VGS=10V,ID=1.7A,Tj=25°C | 5 | |
| Gate-source leakage current | IGSS | 1000 | nA | VGS=20V,VDS=0V | 5 |
CAD (KiCad official)
- Symbol:
IPN60R600P7S - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
ipn60r600p7s-etched.step/ipn60r600p7s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipn60r600p7s.step/ipn60r600p7s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (14 pp, sha256
3de14b5a28be5306, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).