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Contents

README

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IPN60R600P7S

Infineon Technologies · MOSFETs · SOT-223

IPN60R600P7S from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the 600 V CoolMOS P7 MOSFET; static gate-source voltage is limited to -20 V to 20 V and dynamic (AC, f>1 Hz) to -30 V to 30 V, with an integrated gate resistance of 6.3 Ω typical.
2 Drain passive Drain of the MOSFET, also connected to the tab; drain-source breakdown voltage is 600 V minimum and continuous drain current is 6 A at TC=25°C.
3 Source passive Source of the MOSFET; the reference terminal for gate-source voltage and drain current ratings.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (TC=25°C) ID 6 A TC=25°C 3
Continuous drain current (TC=100°C) ID 4 A TC=100°C 3
Pulsed drain current ID,pulse 16 A TC=25°C 3
Avalanche energy, single pulse EAS 17 mJ ID=1.60A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 0.08 mJ ID=1.60A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 1.6 A 3
MOSFET dv/dt ruggedness dv/dt 80 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static; 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 7 W TC=25°C 3
Storage temperature Tstg -40 150 °C 3
Operating junction temperature Tj -40 150 °C 3
Continuous diode forward current IS 6 A TC=25°C 3
Diode pulse current IS,pulse 16 A TC=25°C 3
Reverse diode dv/dt dv/dt 50 V/ns VDS=0...400V,ISD<=6A,Tj=25°C 3
Maximum diode commutation speed dif/dt 900 A/µs VDS=0...400V,ISD<=6A,Tj=25°C 3
Thermal resistance, junction - solder point RthJS 18.21 °C/W 4
Thermal resistance, junction - ambient RthJA 160 °C/W device on PCB, minimal footprint 4
Thermal resistance, junction - ambient for SMD version RthJA 35 75 °C/W Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling; PCB vertical without air stream cooling 4
Soldering temperature, wave soldering only allowed at leads Tsold 260 °C reflow MSL1 4
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.08mA 5
Zero gate voltage drain current (Tj=25°C) IDSS 1 µA VDS=600,VGS=0V,Tj=25°C 5
Drain-source on-state resistance (Tj=25°C) RDS(on) 0.49 0.6 Ω VGS=10V,ID=1.7A,Tj=25°C 5
Gate-source leakage current IGSS 1000 nA VGS=20V,VDS=0V 5

CAD (KiCad official)

  • Symbol: IPN60R600P7S
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: ipn60r600p7s-etched.step / ipn60r600p7s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipn60r600p7s.step / ipn60r600p7s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 3de14b5a28be5306, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF