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IPN60R1K0PFD7S
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Infineon Technologies MOSFETs, SOT-223-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPN60R1K0PFD7S
Infineon Technologies · MOSFETs · SOT-223-3
IPN60R1K0PFD7S from Infineon Technologies, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET, with static VGS limited to -20 V to 20 V and dynamic VGS limited to -30 V to 30 V (AC, f>1 Hz). |
| 2 | Drain | passive | Drain terminal of the 600 V CoolMOS PFD7 MOSFET, rated VDS 650 V at Tj,max, with MOSFET dv/dt ruggedness of 120 V/ns for VDS=0...400 V. |
| 3 | Source | passive | Source terminal, with the internal body diode running between drain and source rated 4.7 A continuous at TC=25°C and 8.8 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | 4.7 | A | TC=25°C | 3 | ||
| Continuous drain current (TC=100°C) | ID | 3 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 8.8 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 10 | mJ | ID=0.9A; VDD=50V; see table 10 | 3 | ||
| Avalanche energy, repetitive | EAR | 0.05 | mJ | ID=0.9A; VDD=50V; see table 10 | 3 | ||
| Avalanche current, single pulse | IAS | 0.9 | A | 3 | |||
| MOSFET dv/dt ruggedness | dv/dt | 120 | V/ns | VDS=0...400V | 3 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static | 3 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 3 | |
| Power dissipation | Ptot | 6 | W | TC=25°C | 3 | ||
| Storage temperature | Tstg | -40 | 150 | °C | 3 | ||
| Operating junction temperature | Tj | -40 | 150 | °C | 3 | ||
| Continuous diode forward current | IS | 4.7 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 8.8 | A | TC=25°C | 3 | ||
| Reverse diode dv/dt | dv/dt | 70 | V/ns | VDS=0...400V,ISD<=3.3A,Tj=25°C | 3 | ||
| Maximum diode commutation speed | diF/dt | 1300 | A/µs | VDS=0...400V,ISD<=3.3A,Tj=25°C | 3 | ||
| Thermal resistance, junction - solder point | RthJS | 19.44 | °C/W | 4 | |||
| Thermal resistance, junction - ambient (device on PCB, minimal footprint) | RthJA | 160 | °C/W | device on PCB, minimal footprint | 4 | ||
| Thermal resistance, junction - ambient for SMD version | RthJA | 35 | 75 | °C/W | Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² copper area for drain connection and cooling; PCB vertical without air stream cooling | 4 | |
| Soldering temperature | Tsold | 260 | °C | wave soldering only allowed at leads; reflow MSL1 | 4 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V,ID=1mA | 5 | ||
| Gate threshold voltage | V(GS)th | 3.5 | 4 | 4.5 | V | VDS=VGS,ID=0.05mA | 5 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | 1 | 37 | µA | VDS=600V,VGS=0V,Tj=25°C | 5 | |
| Gate-source leakage current | IGSS | 1000 | nA | VGS=20V,VDS=0V | 5 | ||
| Drain-source on-state resistance (Tj=25°C) | RDS(on) | 0.84 | 1 | Ω | VGS=10V,ID=1.0A,Tj=25°C | 5 | |
| Reverse recovery time | trr | 44 | 66 | ns | VR=400V,IF=1.0A,diF/dt=100A/µs; see table 8 | 6 | |
| Reverse recovery charge | Qrr | 0.08 | 0.16 | µC | VR=400V,IF=1.0A,diF/dt=100A/µs; see table 8 | 6 |
CAD (KiCad official)
- Symbol:
IPN60R1K0PFD7S - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223-3 (KiCad packages3D, STEP)
- 3D model files:
ipn60r1k0pfd7s-etched.step/ipn60r1k0pfd7s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipn60r1k0pfd7s.step/ipn60r1k0pfd7s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (14 pp, sha256
0f4f93f951ddf17a, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPN60R1K0PFD7S
**Infineon Technologies** · MOSFETs · SOT-223-3
IPN60R1K0PFD7S from Infineon Technologies, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET, with static VGS limited to -20 V to 20 V and dynamic VGS limited to -30 V to 30 V (AC, f>1 Hz). |
| 2 | Drain | passive | Drain terminal of the 600 V CoolMOS PFD7 MOSFET, rated VDS 650 V at Tj,max, with MOSFET dv/dt ruggedness of 120 V/ns for VDS=0...400 V. |
| 3 | Source | passive | Source terminal, with the internal body diode running between drain and source rated 4.7 A continuous at TC=25°C and 8.8 A pulsed. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | | | 4.7 | A | TC=25°C | 3 |
| Continuous drain current (TC=100°C) | ID | | | 3 | A | TC=100°C | 3 |
| Pulsed drain current | ID,pulse | | | 8.8 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS | | | 10 | mJ | ID=0.9A; VDD=50V; see table 10 | 3 |
| Avalanche energy, repetitive | EAR | | | 0.05 | mJ | ID=0.9A; VDD=50V; see table 10 | 3 |
| Avalanche current, single pulse | IAS | | | 0.9 | A | | 3 |
| MOSFET dv/dt ruggedness | dv/dt | | | 120 | V/ns | VDS=0...400V | 3 |
| Gate source voltage (static) | VGS | -20 | | 20 | V | static | 3 |
| Gate source voltage (dynamic) | VGS | -30 | | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation | Ptot | | | 6 | W | TC=25°C | 3 |
| Storage temperature | Tstg | -40 | | 150 | °C | | 3 |
| Operating junction temperature | Tj | -40 | | 150 | °C | | 3 |
| Continuous diode forward current | IS | | | 4.7 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse | | | 8.8 | A | TC=25°C | 3 |
| Reverse diode dv/dt | dv/dt | | | 70 | V/ns | VDS=0...400V,ISD<=3.3A,Tj=25°C | 3 |
| Maximum diode commutation speed | diF/dt | | | 1300 | A/µs | VDS=0...400V,ISD<=3.3A,Tj=25°C | 3 |
| Thermal resistance, junction - solder point | RthJS | | | 19.44 | °C/W | | 4 |
| Thermal resistance, junction - ambient (device on PCB, minimal footprint) | RthJA | | | 160 | °C/W | device on PCB, minimal footprint | 4 |
| Thermal resistance, junction - ambient for SMD version | RthJA | | 35 | 75 | °C/W | Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² copper area for drain connection and cooling; PCB vertical without air stream cooling | 4 |
| Soldering temperature | Tsold | | | 260 | °C | wave soldering only allowed at leads; reflow MSL1 | 4 |
| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | VGS=0V,ID=1mA | 5 |
| Gate threshold voltage | V(GS)th | 3.5 | 4 | 4.5 | V | VDS=VGS,ID=0.05mA | 5 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | | 1 | 37 | µA | VDS=600V,VGS=0V,Tj=25°C | 5 |
| Gate-source leakage current | IGSS | | | 1000 | nA | VGS=20V,VDS=0V | 5 |
| Drain-source on-state resistance (Tj=25°C) | RDS(on) | | 0.84 | 1 | Ω | VGS=10V,ID=1.0A,Tj=25°C | 5 |
| Reverse recovery time | trr | | 44 | 66 | ns | VR=400V,IF=1.0A,diF/dt=100A/µs; see table 8 | 6 |
| Reverse recovery charge | Qrr | | 0.08 | 0.16 | µC | VR=400V,IF=1.0A,diF/dt=100A/µs; see table 8 | 6 |
## CAD (KiCad official)
- Symbol: `IPN60R1K0PFD7S`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223-3 (KiCad packages3D, STEP)
- 3D model files: `ipn60r1k0pfd7s-etched.step` / `ipn60r1k0pfd7s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipn60r1k0pfd7s.step` / `ipn60r1k0pfd7s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885333907398656) (14 pp, sha256 `0f4f93f951ddf17a`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipn60r1k0pfd7s-datasheet.pdf)