component

IPN60R1K0PFD7S

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SOT-223-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsipn60r1k0pfd7sfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 14d ago
viewers ipn60r1k0pfd7s: viewers · Ray 14d ago
ipn60r1k0pfd7s-etched.glb Publish 0.1.0 · Ray 14d ago
ipn60r1k0pfd7s-etched.step ipn60r1k0pfd7s: factory component page (tier=lcsc) · Ray 14d ago
ipn60r1k0pfd7s-hero.glb ipn60r1k0pfd7s: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
ipn60r1k0pfd7s-hero.overlay.json Publish 0.1.0 · Ray 14d ago
ipn60r1k0pfd7s.glb Publish 0.1.0 · Ray 14d ago
ipn60r1k0pfd7s.kicad_mod Publish 0.1.0 · Ray 14d ago
ipn60r1k0pfd7s.kicad_sym Publish 0.1.0 · Ray 14d ago
ipn60r1k0pfd7s.lbr Publish 0.1.0 · Ray 14d ago
ipn60r1k0pfd7s.step Publish 0.1.0 · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
page.json Set visibility: public · Ray 14d ago
README.md Publish 0.1.0 · Ray 14d ago

IPN60R1K0PFD7S

Infineon Technologies · MOSFETs · SOT-223-3

IPN60R1K0PFD7S from Infineon Technologies, in a SOT-223-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET, with static VGS limited to -20 V to 20 V and dynamic VGS limited to -30 V to 30 V (AC, f>1 Hz).
2 Drain passive Drain terminal of the 600 V CoolMOS PFD7 MOSFET, rated VDS 650 V at Tj,max, with MOSFET dv/dt ruggedness of 120 V/ns for VDS=0...400 V.
3 Source passive Source terminal, with the internal body diode running between drain and source rated 4.7 A continuous at TC=25°C and 8.8 A pulsed.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (TC=25°C) ID 4.7 A TC=25°C 3
Continuous drain current (TC=100°C) ID 3 A TC=100°C 3
Pulsed drain current ID,pulse 8.8 A TC=25°C 3
Avalanche energy, single pulse EAS 10 mJ ID=0.9A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 0.05 mJ ID=0.9A; VDD=50V; see table 10 3
Avalanche current, single pulse IAS 0.9 A 3
MOSFET dv/dt ruggedness dv/dt 120 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 6 W TC=25°C 3
Storage temperature Tstg -40 150 °C 3
Operating junction temperature Tj -40 150 °C 3
Continuous diode forward current IS 4.7 A TC=25°C 3
Diode pulse current IS,pulse 8.8 A TC=25°C 3
Reverse diode dv/dt dv/dt 70 V/ns VDS=0...400V,ISD<=3.3A,Tj=25°C 3
Maximum diode commutation speed diF/dt 1300 A/µs VDS=0...400V,ISD<=3.3A,Tj=25°C 3
Thermal resistance, junction - solder point RthJS 19.44 °C/W 4
Thermal resistance, junction - ambient (device on PCB, minimal footprint) RthJA 160 °C/W device on PCB, minimal footprint 4
Thermal resistance, junction - ambient for SMD version RthJA 35 75 °C/W Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² copper area for drain connection and cooling; PCB vertical without air stream cooling 4
Soldering temperature Tsold 260 °C wave soldering only allowed at leads; reflow MSL1 4
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.05mA 5
Zero gate voltage drain current (Tj=25°C) IDSS 1 37 µA VDS=600V,VGS=0V,Tj=25°C 5
Gate-source leakage current IGSS 1000 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance (Tj=25°C) RDS(on) 0.84 1 Ω VGS=10V,ID=1.0A,Tj=25°C 5
Reverse recovery time trr 44 66 ns VR=400V,IF=1.0A,diF/dt=100A/µs; see table 8 6
Reverse recovery charge Qrr 0.08 0.16 µC VR=400V,IF=1.0A,diF/dt=100A/µs; see table 8 6

CAD (KiCad official)

  • Symbol: IPN60R1K0PFD7S
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223-3 (KiCad packages3D, STEP)
  • 3D model files: ipn60r1k0pfd7s-etched.step / ipn60r1k0pfd7s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipn60r1k0pfd7s.step / ipn60r1k0pfd7s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 0f4f93f951ddf17a, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF