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Ray Set visibility: public b53a36c 23d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "ipi024n06n3-g",
  "title": "IPI024N06N3 G",
  "brief": "Infineon Technologies MOSFETs, TO-262-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "ipi024n06n3 g",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "IPI024N06N3 G",
    "manufacturer": "Infineon Technologies",
    "package": "TO-262-3",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588927822240878592",
    "parts": {
      "symbol": "ipi024n06n3-g.kicad_sym",
      "footprint": "ipi024n06n3-g.kicad_mod",
      "model_3d": "ipi024n06n3-g-hero.glb",
      "model_3d_plain": "ipi024n06n3-g-etched.glb",
      "model_3d_step": "ipi024n06n3-g-etched.step",
      "model_3d_step_plain": "ipi024n06n3-g.step",
      "lbr": "ipi024n06n3-g.lbr"
    },
    "distributor_links": {
      "lcsc": "C536958",
      "mouser": "726-IPI024N06N3G"
    },
    "distributor_check": {
      "checked_at": "2026-10-19T03:28:43Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": "726-IPI024N06N3G",
        "status": "found",
        "lifecycle": "Obsolete"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate of the OptiMOS 3 N-channel MOSFET; the datasheet limits the gate-source voltage VGS to -20 V to 20 V."
      },
      {
        "number": "2",
        "name": "Drain",
        "type": "passive",
        "description": "Drain of the MOSFET, also connected to the metal tab; the device is rated for a drain-source breakdown voltage V(BR)DSS of at least 60 V."
      },
      {
        "number": "3",
        "name": "Source",
        "type": "passive",
        "description": "Source of the MOSFET, the reference terminal for the gate-source voltage VGS (limited to -20 V to 20 V)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The package drawing labels the metal tab as 'tab' and the front-page diagram says 'Drain Pin 2, Tab'; The datasheet gives only pin function labels (Gate Pin 1, Drain Pin 2, Source Pin 3) without per-pin"
        ],
        "pages_sent": 10,
        "cost_usd": 0.0364,
        "at": "2026-10-19T03:28:29"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588927822240878592",
        "pages": 10,
        "sha256": "d7ac30511acc2608",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "ipi024n06n3-g.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          10.01,
          4.501,
          20.735
        ],
        "zmin_mm": -7.335,
        "centre_offset_mm": 0.4,
        "footprint_binding": "identity",
        "sha256": "6229dfd25f6cc471f3c456507ab9f31343a83e8ee78e276a2c346d78827d50f7",
        "checked": "2026-10-19",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "ipi024n06n3-g-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          10.01,
          4.501,
          20.735
        ],
        "zmin_mm": -7.335,
        "centre_offset_mm": 0.4,
        "footprint_binding": "identity",
        "sha256": "e077702abce321bd71c2d78f1cfb22d17b891af73c255506fd1d80aa284d81c3",
        "checked": "2026-10-19",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Infineon Technologies",
      "Package": "TO-262-3",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "d7ac30511acc2608f9ce8eb33897137f4f2d07aaba9dc838503a8e1bfb52f13b",
      "rows": [
        {
          "name": "Continuous drain current, TC=25°C",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 169,
          "conditions": "TC=25°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current, TC=100°C",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 130,
          "conditions": "TC=100°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Pulsed drain current",
          "symbol": "ID,pulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 676,
          "conditions": "TC=25°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 634,
          "conditions": "ID=100A,RGS=25Ω",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 250,
          "conditions": "TC=25°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Operating and storage temperature",
          "symbol": "Tj,Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 175,
          "conditions": "IEC climatic category; DIN IEC 68-1: 55/175/56",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 0.6,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-ambient, minimal footprint",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 62,
          "conditions": "minimal footprint",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-ambient, 6 cm² cooling area",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "6 cm² cooling area",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 60,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V,ID=1mA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": 3,
          "max": 4,
          "conditions": "VDS=VGS,ID=196µA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current, Tj=25°C",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": 0.1,
          "max": 3,
          "conditions": "VDS=60V,VGS=0V,Tj=25°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current, Tj=125°C",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": 30,
          "max": 300,
          "conditions": "VDS=60V,VGS=0V,Tj=125°C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate-source leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": 1,
          "max": 100,
          "conditions": "VGS=20V,VDS=0V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 2.1,
          "max": 2.4,
          "conditions": "VGS=10V,ID=100A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Transconductance",
          "symbol": "gfs",
          "kind": "electrical",
          "unit": "S",
          "min": 92,
          "typ": 184,
          "max": null,
          "conditions": "|VDS|>2|ID|RDS(on)max,ID=100A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Input capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 17000,
          "max": 23000,
          "conditions": "VGS=0V,VDS=30V,f=1MHz",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Output capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 3700,
          "max": 4900,
          "conditions": "VGS=0V,VDS=30V,f=1MHz",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate charge total",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 206,
          "max": 275,
          "conditions": "VDD=30V,ID=100A,VGS=0to10V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Output charge",
          "symbol": "Qoss",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 167,
          "max": 222,
          "conditions": "VDD=30V,VGS=0V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Diode continuous forward current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 142,
          "conditions": "TC=25°C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Diode pulse current",
          "symbol": "IS,pulse",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 676,
          "conditions": "TC=25°C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Diode forward voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.94,
          "max": 1.2,
          "conditions": "VGS=0V,IF=100A,Tj=25°C",
          "source_page": 4,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "ipi024n06n3 g"
  ],
  "discovery_pitch": "IPI024N06N3 G (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "ipi024n06n3-g.kicad_sym",
    "ipi024n06n3-g.kicad_mod",
    "ipi024n06n3-g.glb",
    "ipi024n06n3-g.step",
    "ipi024n06n3-g.lbr",
    "docs/hero.png",
    "docs/ipi024n06n3-g-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "ipi024n06n3-g-hero.glb",
    "ipi024n06n3-g-hero.overlay.json",
    "ipi024n06n3-g-etched.glb"
  ],
  "visibility": {
    "public": true
  }
}