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IPI024N06N3 G

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Infineon Technologies MOSFETs, TO-262-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPI024N06N3 G

Infineon Technologies · MOSFETs · TO-262-3

IPI024N06N3 G from Infineon Technologies, in a TO-262-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the OptiMOS 3 N-channel MOSFET; the datasheet limits the gate-source voltage VGS to -20 V to 20 V.
2 Drain passive Drain of the MOSFET, also connected to the metal tab; the device is rated for a drain-source breakdown voltage V(BR)DSS of at least 60 V.
3 Source passive Source of the MOSFET, the reference terminal for the gate-source voltage VGS (limited to -20 V to 20 V).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-262-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current, TC=25°C ID 169 A TC=25°C 3
Continuous drain current, TC=100°C ID 130 A TC=100°C 3
Pulsed drain current ID,pulse 676 A TC=25°C 3
Avalanche energy, single pulse EAS 634 mJ ID=100A,RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 250 W TC=25°C 3
Operating and storage temperature Tj,Tstg -55 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3
Thermal resistance, junction-case RthJC 0.6 K/W 3
Thermal resistance, junction-ambient, minimal footprint RthJA 62 K/W minimal footprint 3
Thermal resistance, junction-ambient, 6 cm² cooling area RthJA 40 K/W 6 cm² cooling area 3
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0V,ID=1mA 3
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=196µA 3
Zero gate voltage drain current, Tj=25°C IDSS 0.1 3 µA VDS=60V,VGS=0V,Tj=25°C 3
Zero gate voltage drain current, Tj=125°C IDSS 30 300 µA VDS=60V,VGS=0V,Tj=125°C 3
Gate-source leakage current IGSS 1 100 nA VGS=20V,VDS=0V 3
Drain-source on-state resistance RDS(on) 2.1 2.4 mΩ VGS=10V,ID=100A 3
Transconductance gfs 92 184 S /VDS/>2/ID/RDS(on)max,ID=100A 3
Input capacitance Ciss 17000 23000 pF VGS=0V,VDS=30V,f=1MHz 4
Output capacitance Coss 3700 4900 pF VGS=0V,VDS=30V,f=1MHz 4
Gate charge total Qg 206 275 nC VDD=30V,ID=100A,VGS=0to10V 4
Output charge Qoss 167 222 nC VDD=30V,VGS=0V 4
Diode continuous forward current IS 142 A TC=25°C 4
Diode pulse current IS,pulse 676 A TC=25°C 4
Diode forward voltage VSD 0.94 1.2 V VGS=0V,IF=100A,Tj=25°C 4

CAD (KiCad official)

  • Symbol: IPI024N06N3 G
  • Footprint: Package_TO_SOT_THT:TO-262-3_Vertical
  • 3D model: TO-262-3 (KiCad packages3D, STEP)
  • 3D model files: ipi024n06n3-g-etched.step / ipi024n06n3-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipi024n06n3-g.step / ipi024n06n3-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 d7ac30511acc2608, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF