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IPF016N10NF2SATMA1

Public Made by Adom

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Infineon Technologies MOSFETs, TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripf016n10nf2satma1factory-2.0.0extractor-text

Verified IPF016N10NF2SATMA1

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPF016N10NF2SATMA1 · TO-263-7 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 11-page datasheet
  • ✓distributor: lcsc C6279924, digikey 448-IPF016N10NF2SATMA1TR-ND, mouser 726-IPF016N10NF2SATM
  • ✓family: TO-263-7_TabPin8
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-9hjkoey6/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipf016n10nf2satma1.kicad_sym✓ ipf016n10nf2satma1.kicad_mod✓ ipf016n10nf2satma1.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers ipf016n10nf2satma1: viewers · Ray 4d ago
ipf016n10nf2satma1-etched.glb Publish 0.1.0 · Ray 4d ago
ipf016n10nf2satma1-etched.step ipf016n10nf2satma1: factory component page (tier=mfr) · Ray 4d ago
ipf016n10nf2satma1-hero.glb ipf016n10nf2satma1: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
ipf016n10nf2satma1-hero.overlay.json Publish 0.1.0 · Ray 4d ago
ipf016n10nf2satma1.glb Publish 0.1.0 · Ray 4d ago
ipf016n10nf2satma1.kicad_mod Publish 0.1.0 · Ray 4d ago
ipf016n10nf2satma1.kicad_sym Publish 0.1.0 · Ray 4d ago
ipf016n10nf2satma1.lbr Publish 0.1.0 · Ray 4d ago
ipf016n10nf2satma1.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier mfr, 8 pins · Ray 4d ago

IPF016N10NF2SATMA1

Infineon Technologies · MOSFETs · TO-263-7

IPF016N10NF2SATMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin; gate-source voltage VGS is limited to -20 V to 20 V.
2 Source passive Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V.
3 Source passive Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V.
4 Drain passive Drain pin; drain-source breakdown voltage V(BR)DSS is at least 100 V and continuous drain current is 274 A at VGS=10 V, TC=25°C.
5 Source passive Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V.
6 Source passive Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V.
7 Source passive Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V.
8 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263-7
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V, ID=1mA 4
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS, ID=267µA 4
Zero gate voltage drain current IDSS 0.1 1 µA VDS=100V, VGS=0V, Tj=25°C 4
Zero gate voltage drain current IDSS 10 100 µA VDS=100V, VGS=0V, Tj=125°C 4
Gate-source leakage current IGSS 10 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 1.4 1.6 mΩ VGS=10V, ID=100A 4
Drain-source on-state resistance RDS(on) 1.7 2.1 mΩ VGS=6V, ID=50A 4
Transconductance gfs 133 S /VDS/≥2/ID/RDS(on)max, ID=100A 4
Gate charge total Qg 161 241 nC VDD=50V, ID=100A, VGS=0 to 10V 4
Diode forward voltage VSD 0.86 1.2 V VGS=0V, IF=100A, Tj=25°C 5
Diode continuous forward current IS 205 A TC=25°C 5
Diode pulse current IS,pulse 1096 A TC=25°C 5
Continuous drain current ID 274 A VGS=10V, TC=25°C 3
Continuous drain current ID 210 A VGS=10V, TC=100°C 3
Continuous drain current ID 194 A VGS=6V, TC=100°C 3
Continuous drain current ID 34 A VGS=10V, TA=25°C, RthJA=40°C/W 3
Pulsed drain current ID,pulse 1096 A TA=25°C 3
Avalanche energy, single pulse EAS 1065 mJ ID=100A, RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 300 W TC=25°C 3
Power dissipation Ptot 3.8 W TA=25°C, RthJA=40°C/W 3
Operating and storage temperature Tj,Tstg -55 175 °C 3
Thermal resistance, junction - case RthJC 0.5 °C/W 3
Thermal resistance, junction - ambient, 6 cm² cooling area RthJA 40 °C/W 3
Thermal resistance, junction - ambient, minimal footprint RthJA 62 °C/W 3
Gate resistance RG 1.4 Ω 4
Input capacitance Ciss 11000 pF VGS=0V, VDS=50V, f=1MHz 4
Output capacitance Coss 1700 pF VGS=0V, VDS=50V, f=1MHz 4
Reverse transfer capacitance Crss 76 pF VGS=0V, VDS=50V, f=1MHz 4
Turn-on delay time td(on) 25 ns VDD=50V, VGS=10V, ID=100A, RG,ext=1.6Ω 4
Rise time tr 65 ns VDD=50V, VGS=10V, ID=100A, RG,ext=1.6Ω 4
Turn-off delay time td(off) 60 ns VDD=50V, VGS=10V, ID=100A, RG,ext=1.6Ω 4
Fall time tf 33 ns VDD=50V, VGS=10V, ID=100A, RG,ext=1.6Ω 4
Gate to source charge Qgs 51 nC VDD=50V, ID=100A, VGS=0 to 10V 4
Gate charge at threshold Qg(th) 34 nC VDD=50V, ID=100A, VGS=0 to 10V 4
Gate to drain charge Qgd 33 nC VDD=50V, ID=100A, VGS=0 to 10V 4
Switching charge Qsw 49 nC VDD=50V, ID=100A, VGS=0 to 10V 4
Gate plateau voltage Vplateau 4.5 V VDD=50V, ID=100A, VGS=0 to 10V 4
Gate charge total, sync. FET Qg(sync) 140 nC VDS=0.1V, VGS=0 to 10V 4
Output charge Qoss 204 nC VDS=50V, VGS=0V 4
Reverse recovery time trr 49 ns VR=50V, IF=100A, diF/dt=500A/µs 5
Reverse recovery charge Qrr 437 nC VR=50V, IF=100A, diF/dt=500A/µs 5

CAD (KiCad official)

  • Symbol: IPF016N10NF2SATMA1
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin8
  • 3D model: TO-263-7 (KiCad packages3D, STEP)
  • 3D model files: ipf016n10nf2satma1-etched.step / ipf016n10nf2satma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipf016n10nf2satma1.step / ipf016n10nf2satma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 7637f3396dfc72e0, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF