component
IPF016N10NF2SATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIPF016N10NF2SATMA1
Infineon Technologies · MOSFETs · TO-263-7
IPF016N10NF2SATMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin; gate-source voltage VGS is limited to -20 V to 20 V. |
| 2 | Source | passive | Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V. |
| 3 | Source | passive | Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V. |
| 4 | Drain | passive | Drain pin; drain-source breakdown voltage V(BR)DSS is at least 100 V and continuous drain current is 274 A at VGS=10 V, TC=25°C. |
| 5 | Source | passive | Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V. |
| 6 | Source | passive | Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V. |
| 7 | Source | passive | Source pin; the datasheet gives no separate electrical limit for this pin beyond the device ratings such as VDS of 100 V. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=1mA | 4 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS, ID=267µA | 4 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=100V, VGS=0V, Tj=25°C | 4 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=100V, VGS=0V, Tj=125°C | 4 | |
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=20V, VDS=0V | 4 | |
| Drain-source on-state resistance | RDS(on) | 1.4 | 1.6 | mΩ | VGS=10V, ID=100A | 4 | |
| Drain-source on-state resistance | RDS(on) | 1.7 | 2.1 | mΩ | VGS=6V, ID=50A | 4 | |
| Transconductance | gfs | 133 | S | /VDS/≥2/ID/RDS(on)max, ID=100A | 4 | ||
| Gate charge total | Qg | 161 | 241 | nC | VDD=50V, ID=100A, VGS=0 to 10V | 4 | |
| Diode forward voltage | VSD | 0.86 | 1.2 | V | VGS=0V, IF=100A, Tj=25°C | 5 | |
| Diode continuous forward current | IS | 205 | A | TC=25°C | 5 | ||
| Diode pulse current | IS,pulse | 1096 | A | TC=25°C | 5 | ||
| Continuous drain current | ID | 274 | A | VGS=10V, TC=25°C | 3 | ||
| Continuous drain current | ID | 210 | A | VGS=10V, TC=100°C | 3 | ||
| Continuous drain current | ID | 194 | A | VGS=6V, TC=100°C | 3 | ||
| Continuous drain current | ID | 34 | A | VGS=10V, TA=25°C, RthJA=40°C/W | 3 | ||
| Pulsed drain current | ID,pulse | 1096 | A | TA=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 1065 | mJ | ID=100A, RGS=25Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation | Ptot | 300 | W | TC=25°C | 3 | ||
| Power dissipation | Ptot | 3.8 | W | TA=25°C, RthJA=40°C/W | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 175 | °C | 3 | ||
| Thermal resistance, junction - case | RthJC | 0.5 | °C/W | 3 | |||
| Thermal resistance, junction - ambient, 6 cm² cooling area | RthJA | 40 | °C/W | 3 | |||
| Thermal resistance, junction - ambient, minimal footprint | RthJA | 62 | °C/W | 3 | |||
| Gate resistance | RG | 1.4 | Ω | 4 | |||
| Input capacitance | Ciss | 11000 | pF | VGS=0V, VDS=50V, f=1MHz | 4 | ||
| Output capacitance | Coss | 1700 | pF | VGS=0V, VDS=50V, f=1MHz | 4 | ||
| Reverse transfer capacitance | Crss | 76 | pF | VGS=0V, VDS=50V, f=1MHz | 4 | ||
| Turn-on delay time | td(on) | 25 | ns | VDD=50V, VGS=10V, ID=100A, RG,ext=1.6Ω | 4 | ||
| Rise time | tr | 65 | ns | VDD=50V, VGS=10V, ID=100A, RG,ext=1.6Ω | 4 | ||
| Turn-off delay time | td(off) | 60 | ns | VDD=50V, VGS=10V, ID=100A, RG,ext=1.6Ω | 4 | ||
| Fall time | tf | 33 | ns | VDD=50V, VGS=10V, ID=100A, RG,ext=1.6Ω | 4 | ||
| Gate to source charge | Qgs | 51 | nC | VDD=50V, ID=100A, VGS=0 to 10V | 4 | ||
| Gate charge at threshold | Qg(th) | 34 | nC | VDD=50V, ID=100A, VGS=0 to 10V | 4 | ||
| Gate to drain charge | Qgd | 33 | nC | VDD=50V, ID=100A, VGS=0 to 10V | 4 | ||
| Switching charge | Qsw | 49 | nC | VDD=50V, ID=100A, VGS=0 to 10V | 4 | ||
| Gate plateau voltage | Vplateau | 4.5 | V | VDD=50V, ID=100A, VGS=0 to 10V | 4 | ||
| Gate charge total, sync. FET | Qg(sync) | 140 | nC | VDS=0.1V, VGS=0 to 10V | 4 | ||
| Output charge | Qoss | 204 | nC | VDS=50V, VGS=0V | 4 | ||
| Reverse recovery time | trr | 49 | ns | VR=50V, IF=100A, diF/dt=500A/µs | 5 | ||
| Reverse recovery charge | Qrr | 437 | nC | VR=50V, IF=100A, diF/dt=500A/µs | 5 |
CAD (KiCad official)
- Symbol:
IPF016N10NF2SATMA1 - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin8 - 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files:
ipf016n10nf2satma1-etched.step/ipf016n10nf2satma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipf016n10nf2satma1.step/ipf016n10nf2satma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
7637f3396dfc72e0, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).