# IPF016N06NF2SATMA1

**Infineon Technologies** · MOSFETs · TO-263-7

IPF016N06NF2SATMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and a typical threshold voltage of 2.8 V. |
| 2 | Source | passive | Source pin, connected in parallel with pins 3, 5, 6 and 7 for carrying up to 230 A continuous drain current. |
| 3 | Source | passive | Source pin, connected in parallel with pins 2, 5, 6 and 7 for carrying up to 230 A continuous drain current. |
| 4 | Drain | passive | Drain pin, connected to the drain tab, with a drain-source voltage rating of 60 V. |
| 5 | Source | passive | Source pin, connected in parallel with pins 2, 3, 6 and 7 for carrying up to 230 A continuous drain current. |
| 6 | Source | passive | Source pin, connected in parallel with pins 2, 3, 5 and 7 for carrying up to 230 A continuous drain current. |
| 7 | Source | passive | Source pin, connected in parallel with pins 2, 3, 5 and 6 for carrying up to 230 A continuous drain current. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 230 | A | VGS=10 V, TC=25 °C | 3 |
| Continuous drain current | ID |  |  | 177 | A | VGS=10 V, TC=100 °C | 3 |
| Continuous drain current | ID |  |  | 35 | A | VGS=10 V, TA=25°C, RthJA=40°C/W | 3 |
| Pulsed drain current | ID,pulse |  |  | 920 | A | TC=25 °C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 349 | mJ | ID=100 A, RGS=25 Ω | 3 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Power dissipation | Ptot |  |  | 231 | W | TC=25 °C | 3 |
| Power dissipation | Ptot |  |  | 3.8 | W | TA=25°C, RthJA=40°C/W | 3 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 175 | °C |  | 3 |
| Thermal resistance, junction-case | RthJC |  |  | 0.65 | °C/W |  | 4 |
| Thermal resistance, junction-ambient, 6 cm² cooling area | RthJA |  |  | 40 | °C/W |  | 4 |
| Thermal resistance, junction-ambient, minimal footprint | RthJA |  |  | 62 | °C/W |  | 4 |
| Drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | VGS=0 V, ID=1 mA | 5 |
| Gate threshold voltage | VGS(th) | 2.1 | 2.8 | 3.3 | V | VDS=VGS, ID=129 μA | 5 |
| Zero gate voltage drain current | IDSS |  | 0.5 | 1 | μA | VDS=60 V, VGS=0 V, Tj=25 °C | 5 |
| Zero gate voltage drain current | IDSS |  | 10 | 100 | μA | VDS=60 V, VGS=0 V, Tj=125 °C | 5 |
| Gate-source leakage current | IGSS |  | 10 | 100 | nA | VGS=20 V, VDS=0 V | 5 |
| Drain-source on-state resistance | RDS(on) |  | 1.38 | 1.65 | mΩ | VGS=10 V, ID=100 A | 5 |
| Drain-source on-state resistance | RDS(on) |  | 1.8 | 2.5 | mΩ | VGS=6 V, ID=50 A | 5 |
| Transconductance | gfs | 110 |  |  | S | /VDS/≥2/ID/RDS(on)max, ID=100 A | 5 |
| Gate charge total | Qg |  | 108 | 162 | nC | VDD=30 V, ID=100 A, VGS=0 to 10 V | 5 |
| Diode continuous forward current | IS |  |  | 181 | A | TC=25 °C | 6 |
| Diode pulse current | IS,pulse |  |  | 920 | A | TC=25 °C | 6 |
| Diode forward voltage | VSD |  | 0.89 | 1 | V | VGS=0 V, IF=100 A, Tj=25 °C | 6 |
| Gate resistance | RG |  | 2.7 |  | Ω |  | 5 |
| Input capacitance | Ciss |  | 7300 |  | pF | VGS=0 V, VDS=30 V, f=1 MHz | 5 |
| Output capacitance | Coss |  | 1550 |  | pF | VGS=0 V, VDS=30 V, f=1 MHz | 5 |
| Reverse transfer capacitance | Crss |  | 63 |  | pF | VGS=0 V, VDS=30 V, f=1 MHz | 5 |
| Turn-on delay time | td(on) |  | 22 |  | ns | VDD=30 V, VGS=10 V, ID=100 A, RG,ext=1.8 Ω | 5 |
| Rise time | tr |  | 31 |  | ns | VDD=30 V, VGS=10 V, ID=100 A, RG,ext=1.8 Ω | 5 |
| Turn-off delay time | td(off) |  | 48 |  | ns | VDD=30 V, VGS=10 V, ID=100 A, RG,ext=1.8 Ω | 5 |
| Fall time | tf |  | 17 |  | ns | VDD=30 V, VGS=10 V, ID=100 A, RG,ext=1.8 Ω | 5 |

## CAD (KiCad official)

- Symbol: `IPF016N06NF2SATMA1`
- Footprint: `Package_TO_SOT_SMD:TO-263-7_TabPin8`
- 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files: `ipf016n06nf2satma1-etched.step` / `ipf016n06nf2satma1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipf016n06nf2satma1.step` / `ipf016n06nf2satma1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://www.infineon.com/dgdl/Infineon-IPF016N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d1298c66aee) (12 pp, sha256 `c3eb2ad5ccf6b602`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipf016n06nf2satma1-datasheet.pdf)