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IPF016N06NF2SATMA1

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Infineon Technologies MOSFETs, TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPF016N06NF2SATMA1

Infineon Technologies · MOSFETs · TO-263-7

IPF016N06NF2SATMA1 from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and a typical threshold voltage of 2.8 V.
2 Source passive Source pin, connected in parallel with pins 3, 5, 6 and 7 for carrying up to 230 A continuous drain current.
3 Source passive Source pin, connected in parallel with pins 2, 5, 6 and 7 for carrying up to 230 A continuous drain current.
4 Drain passive Drain pin, connected to the drain tab, with a drain-source voltage rating of 60 V.
5 Source passive Source pin, connected in parallel with pins 2, 3, 6 and 7 for carrying up to 230 A continuous drain current.
6 Source passive Source pin, connected in parallel with pins 2, 3, 5 and 7 for carrying up to 230 A continuous drain current.
7 Source passive Source pin, connected in parallel with pins 2, 3, 5 and 6 for carrying up to 230 A continuous drain current.
8 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263-7
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 230 A VGS=10 V, TC=25 °C 3
Continuous drain current ID 177 A VGS=10 V, TC=100 °C 3
Continuous drain current ID 35 A VGS=10 V, TA=25°C, RthJA=40°C/W 3
Pulsed drain current ID,pulse 920 A TC=25 °C 3
Avalanche energy, single pulse EAS 349 mJ ID=100 A, RGS=25 Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 231 W TC=25 °C 3
Power dissipation Ptot 3.8 W TA=25°C, RthJA=40°C/W 3
Operating and storage temperature Tj, Tstg -55 175 °C 3
Thermal resistance, junction-case RthJC 0.65 °C/W 4
Thermal resistance, junction-ambient, 6 cm² cooling area RthJA 40 °C/W 4
Thermal resistance, junction-ambient, minimal footprint RthJA 62 °C/W 4
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0 V, ID=1 mA 5
Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS, ID=129 μA 5
Zero gate voltage drain current IDSS 0.5 1 μA VDS=60 V, VGS=0 V, Tj=25 °C 5
Zero gate voltage drain current IDSS 10 100 μA VDS=60 V, VGS=0 V, Tj=125 °C 5
Gate-source leakage current IGSS 10 100 nA VGS=20 V, VDS=0 V 5
Drain-source on-state resistance RDS(on) 1.38 1.65 mΩ VGS=10 V, ID=100 A 5
Drain-source on-state resistance RDS(on) 1.8 2.5 mΩ VGS=6 V, ID=50 A 5
Transconductance gfs 110 S /VDS/≥2/ID/RDS(on)max, ID=100 A 5
Gate charge total Qg 108 162 nC VDD=30 V, ID=100 A, VGS=0 to 10 V 5
Diode continuous forward current IS 181 A TC=25 °C 6
Diode pulse current IS,pulse 920 A TC=25 °C 6
Diode forward voltage VSD 0.89 1 V VGS=0 V, IF=100 A, Tj=25 °C 6
Gate resistance RG 2.7 Ω 5
Input capacitance Ciss 7300 pF VGS=0 V, VDS=30 V, f=1 MHz 5
Output capacitance Coss 1550 pF VGS=0 V, VDS=30 V, f=1 MHz 5
Reverse transfer capacitance Crss 63 pF VGS=0 V, VDS=30 V, f=1 MHz 5
Turn-on delay time td(on) 22 ns VDD=30 V, VGS=10 V, ID=100 A, RG,ext=1.8 Ω 5
Rise time tr 31 ns VDD=30 V, VGS=10 V, ID=100 A, RG,ext=1.8 Ω 5
Turn-off delay time td(off) 48 ns VDD=30 V, VGS=10 V, ID=100 A, RG,ext=1.8 Ω 5
Fall time tf 17 ns VDD=30 V, VGS=10 V, ID=100 A, RG,ext=1.8 Ω 5

CAD (KiCad official)

  • Symbol: IPF016N06NF2SATMA1
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin8
  • 3D model: TO-263-7 (KiCad packages3D, STEP)
  • 3D model files: ipf016n06nf2satma1-etched.step / ipf016n06nf2satma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipf016n06nf2satma1.step / ipf016n06nf2satma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 c3eb2ad5ccf6b602, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF