# IPD90R1K2C3

**Infineon Technologies** · MOSFETs · TO-252

IPD90R1K2C3 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage is rated ±20 V static and ±30 V AC (f>1 Hz), with threshold VGS(th) of 2.5 to 3.5 V. |
| 2 | D | passive | Drain pin, also connected to the tab; drain-source voltage is 900 V at TJ=25 °C and continuous drain current is 5.1 A at TC=25 °C. |
| 3 | S | passive | Source pin; carries the full drain current, with continuous diode forward current of 2.8 A at TC=25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 900 |  |  | V | V_GS=0 V, I_D=250 µA | 2 |
| Gate threshold voltage | V_GS(th) | 2.5 | 3 | 3.5 | V | V_DS=V_GS, I_D=0.31 mA | 2 |
| Zero gate voltage drain current | I_DSS |  |  | 1 | µA | V_DS=900 V, V_GS=0 V, T_j=25 °C | 2 |
| Gate-source leakage current | I_GSS |  |  | 100 | nA | V_GS=20 V, V_DS=0 V | 2 |
| Drain-source on-state resistance | R_DS(on) |  | 0.94 | 1.2 | Ω | V_GS=10 V, I_D=2.8 A, T_j=25 °C | 2 |
| Diode forward voltage | V_SD |  | 0.8 | 1.2 | V | V_GS=0 V, I_F=2.8 A, T_j=25 °C | 3 |
| Continuous drain current | I_D |  |  | 5.1 | A | T_C=25 °C | 1 |
| Continuous drain current | I_D |  |  | 3.2 | A | T_C=100 °C | 1 |
| Pulsed drain current | I_D,pulse |  |  | 10 | A | T_C=25 °C | 1 |
| Avalanche energy, single pulse | E_AS |  |  | 68 | mJ | I_D=0.92 A, V_DD=50 V | 1 |
| Avalanche energy, repetitive | E_AR |  |  | 0.31 | mJ | I_D=0.92 A, V_DD=50 V | 1 |
| Avalanche current, repetitive | I_AR |  |  | 0.92 | A |  | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | V_DS=0...400 V | 1 |
| Gate source voltage, static | V_GS | -20 |  | 20 | V | static | 1 |
| Gate source voltage, AC (f>1 Hz) | V_GS | -30 |  | 30 | V | AC (f>1 Hz) | 1 |
| Power dissipation | P_tot |  |  | 83 | W | T_C=25 °C | 1 |
| Operating and storage temperature | T_J, T_stg | -55 |  | 150 | °C |  | 1 |
| Continuous diode forward current | I_S |  |  | 2.8 | A | T_C=25 °C | 2 |
| Diode pulse current | I_S,pulse |  |  | 11 | A |  | 2 |
| Reverse diode dv/dt | dv/dt |  |  | 4 | V/ns |  | 2 |
| Thermal resistance, junction - case | R_thJC |  |  | 1.5 | K/W |  | 2 |
| Thermal resistance, junction - ambient, leaded | R_thJA |  |  | 62 | K/W |  | 2 |
| Soldering temperature, wavesoldering, leads only | T_sold |  |  | 260 | °C | 1.6 mm (0.063 in.) from case for 10 s | 2 |

## CAD (KiCad official)

- Symbol: `IPD90R1K2C3`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ipd90r1k2c3-etched.step` / `ipd90r1k2c3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd90r1k2c3.step` / `ipd90r1k2c3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885322352091136) (10 pp, sha256 `1c6893dea0aaa1c7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipd90r1k2c3-datasheet.pdf)