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IPD90R1K2C3

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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IPD90R1K2C3

Infineon Technologies · MOSFETs · TO-252

IPD90R1K2C3 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin; gate-source voltage is rated ±20 V static and ±30 V AC (f>1 Hz), with threshold VGS(th) of 2.5 to 3.5 V.
2 D passive Drain pin, also connected to the tab; drain-source voltage is 900 V at TJ=25 °C and continuous drain current is 5.1 A at TC=25 °C.
3 S passive Source pin; carries the full drain current, with continuous diode forward current of 2.8 A at TC=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 900 V V_GS=0 V, I_D=250 µA 2
Gate threshold voltage V_GS(th) 2.5 3 3.5 V V_DS=V_GS, I_D=0.31 mA 2
Zero gate voltage drain current I_DSS 1 µA V_DS=900 V, V_GS=0 V, T_j=25 °C 2
Gate-source leakage current I_GSS 100 nA V_GS=20 V, V_DS=0 V 2
Drain-source on-state resistance R_DS(on) 0.94 1.2 Ω V_GS=10 V, I_D=2.8 A, T_j=25 °C 2
Diode forward voltage V_SD 0.8 1.2 V V_GS=0 V, I_F=2.8 A, T_j=25 °C 3
Continuous drain current I_D 5.1 A T_C=25 °C 1
Continuous drain current I_D 3.2 A T_C=100 °C 1
Pulsed drain current I_D,pulse 10 A T_C=25 °C 1
Avalanche energy, single pulse E_AS 68 mJ I_D=0.92 A, V_DD=50 V 1
Avalanche energy, repetitive E_AR 0.31 mJ I_D=0.92 A, V_DD=50 V 1
Avalanche current, repetitive I_AR 0.92 A 1
MOSFET dv/dt ruggedness dv/dt 50 V/ns V_DS=0...400 V 1
Gate source voltage, static V_GS -20 20 V static 1
Gate source voltage, AC (f>1 Hz) V_GS -30 30 V AC (f>1 Hz) 1
Power dissipation P_tot 83 W T_C=25 °C 1
Operating and storage temperature T_J, T_stg -55 150 °C 1
Continuous diode forward current I_S 2.8 A T_C=25 °C 2
Diode pulse current I_S,pulse 11 A 2
Reverse diode dv/dt dv/dt 4 V/ns 2
Thermal resistance, junction - case R_thJC 1.5 K/W 2
Thermal resistance, junction - ambient, leaded R_thJA 62 K/W 2
Soldering temperature, wavesoldering, leads only T_sold 260 °C 1.6 mm (0.063 in.) from case for 10 s 2

CAD (KiCad official)

  • Symbol: IPD90R1K2C3
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd90r1k2c3-etched.step / ipd90r1k2c3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd90r1k2c3.step / ipd90r1k2c3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 1c6893dea0aaa1c7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF