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IPD90P04P4L04ATMA2

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD90P04P4L04ATMA2

Infineon Technologies · MOSFETs · TO-252

IPD90P04P4L04ATMA2 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel logic-level MOSFET, rated for a gate-source voltage of +5/-16 V, with V_GS = -10 V used for the stated R_DS(on) of 4.3 mΩ max at I_D = -90 A.
2 Drain passive Drain terminal, electrically connected to the tab, rated for a continuous drain current of -90 A at T_C = 25 °C (V_GS = -10 V) with a drain-source voltage of -40 V.
3 Source passive Source terminal, which carries the body-diode ratings of a continuous forward current of -90 A and a pulsed current of -360 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (TC=25°C) ID -90 A TC=25°C, VGS=-10V 1
Continuous drain current (TC=100°C) ID -90 A TC=100°C, VGS=-10V 1
Pulsed drain current ID,pulse -360 A TC=25°C 1
Avalanche energy, single pulse EAS 60 mJ ID=-45A 1
Avalanche current, single pulse IAS -90 A 1
Gate source voltage VGS -16 5 V 1
Power dissipation Ptot 125 W TC=25°C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction - case RthJC 1.2 K/W 2
Thermal resistance, junction - ambient, SMD minimal footprint RthJA 62 K/W SMD version, device on PCB, minimal footprint 2
Thermal resistance, junction - ambient, 6 cm2 cooling area RthJA 40 K/W SMD version, device on PCB, 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS -40 V VGS=0V, ID=-1mA 2
Gate threshold voltage VGS(th) -1.2 -1.7 -2.2 V VDS=VGS, ID=-250µA 2
Zero gate voltage drain current (Tj=25°C) IDSS -0.08 -1 µA VDS=-32V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current (Tj=125°C) IDSS -20 -200 µA VDS=-32V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS -100 nA VGS=-16V, VDS=0V 2
Drain-source on-state resistance (VGS=-4.5V) RDS(on) 5.1 6.6 mW VGS=-4.5V, ID=-85A 2
Drain-source on-state resistance (VGS=-10V) RDS(on) 3.6 4.3 mW VGS=-10V, ID=-90A 2
Input capacitance Ciss 8900 11570 pF VGS=0V, VDS=-25V, f=1MHz 3
Output capacitance Coss 2532 3800 pF VGS=0V, VDS=-25V, f=1MHz 3
Reverse transfer capacitance Crss 100 200 pF VGS=0V, VDS=-25V, f=1MHz 3
Gate to source charge Qgs 31 40 nC VDD=-32V, ID=-90A, VGS=0 to -10V 3
Gate to drain charge Qgd 24 48 nC VDD=-32V, ID=-90A, VGS=0 to -10V 3
Gate charge total Qg 135 176 nC VDD=-32V, ID=-90A, VGS=0 to -10V 3
Diode continuous forward current IS -90 A 3
Diode pulse current IS,pulse -360 A 3
Diode forward voltage VSD -1 -1.3 V VGS=0V, IF=-90A, Tj=25°C 3

CAD (KiCad official)

  • Symbol: IPD90P04P4L04ATMA2
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd90p04p4l04atma2-etched.step / ipd90p04p4l04atma2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd90p04p4l04atma2.step / ipd90p04p4l04atma2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 c494550730c3d2ce, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF