component
IPD90P04P4L04ATMA2
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPD90P04P4L04ATMA2
Infineon Technologies · MOSFETs · TO-252
IPD90P04P4L04ATMA2 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel logic-level MOSFET, rated for a gate-source voltage of +5/-16 V, with V_GS = -10 V used for the stated R_DS(on) of 4.3 mΩ max at I_D = -90 A. |
| 2 | Drain | passive | Drain terminal, electrically connected to the tab, rated for a continuous drain current of -90 A at T_C = 25 °C (V_GS = -10 V) with a drain-source voltage of -40 V. |
| 3 | Source | passive | Source terminal, which carries the body-diode ratings of a continuous forward current of -90 A and a pulsed current of -360 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current (TC=25°C) | ID | -90 | A | TC=25°C, VGS=-10V | 1 | ||
| Continuous drain current (TC=100°C) | ID | -90 | A | TC=100°C, VGS=-10V | 1 | ||
| Pulsed drain current | ID,pulse | -360 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 60 | mJ | ID=-45A | 1 | ||
| Avalanche current, single pulse | IAS | -90 | A | 1 | |||
| Gate source voltage | VGS | -16 | 5 | V | 1 | ||
| Power dissipation | Ptot | 125 | W | TC=25°C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction - case | RthJC | 1.2 | K/W | 2 | |||
| Thermal resistance, junction - ambient, SMD minimal footprint | RthJA | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 | ||
| Thermal resistance, junction - ambient, 6 cm2 cooling area | RthJA | 40 | K/W | SMD version, device on PCB, 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | -40 | V | VGS=0V, ID=-1mA | 2 | ||
| Gate threshold voltage | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS, ID=-250µA | 2 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | -0.08 | -1 | µA | VDS=-32V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current (Tj=125°C) | IDSS | -20 | -200 | µA | VDS=-32V, VGS=0V, Tj=125°C | 2 | |
| Gate-source leakage current | IGSS | -100 | nA | VGS=-16V, VDS=0V | 2 | ||
| Drain-source on-state resistance (VGS=-4.5V) | RDS(on) | 5.1 | 6.6 | mW | VGS=-4.5V, ID=-85A | 2 | |
| Drain-source on-state resistance (VGS=-10V) | RDS(on) | 3.6 | 4.3 | mW | VGS=-10V, ID=-90A | 2 | |
| Input capacitance | Ciss | 8900 | 11570 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Output capacitance | Coss | 2532 | 3800 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 100 | 200 | pF | VGS=0V, VDS=-25V, f=1MHz | 3 | |
| Gate to source charge | Qgs | 31 | 40 | nC | VDD=-32V, ID=-90A, VGS=0 to -10V | 3 | |
| Gate to drain charge | Qgd | 24 | 48 | nC | VDD=-32V, ID=-90A, VGS=0 to -10V | 3 | |
| Gate charge total | Qg | 135 | 176 | nC | VDD=-32V, ID=-90A, VGS=0 to -10V | 3 | |
| Diode continuous forward current | IS | -90 | A | 3 | |||
| Diode pulse current | IS,pulse | -360 | A | 3 | |||
| Diode forward voltage | VSD | -1 | -1.3 | V | VGS=0V, IF=-90A, Tj=25°C | 3 |
CAD (KiCad official)
- Symbol:
IPD90P04P4L04ATMA2 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd90p04p4l04atma2-etched.step/ipd90p04p4l04atma2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd90p04p4l04atma2.step/ipd90p04p4l04atma2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
c494550730c3d2ce, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).