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IPD78CN10N G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPD78CN10N G-VB
VBsemi Elec · MOSFETs · TO-252
IPD78CN10N G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V (VGS). |
| 2 | D | passive | Drain of the N-channel MOSFET; the datasheet rates the drain-source voltage at 100 V (VDS) and the continuous drain current at 25 A at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET; the datasheet rates the continuous source-drain diode current at 50 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 25 | A | TC = 25 °C (TJ = 175 °C) | 1 | ||
| Continuous Drain Current | ID | 20 | A | TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 12 | A | TA = 25 °C, notes b, c | 1 | ||
| Continuous Drain Current | ID | 10 | A | TA = 70 °C, notes b, c | 1 | ||
| Pulsed Drain Current | IDM | 75 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 50 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 6.9 | A | TA = 25 °C, notes b, c | 1 | ||
| Avalanche Current Pulse | IAS | 33 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 55 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 83 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 58 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 8.3 | W | TA = 25 °C, notes b, c | 1 | ||
| Maximum Power Dissipation | PD | 5.8 | W | TA = 70 °C, notes b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 15 | 18 | °C/W | t ≤ 10 s, notes b, d | 1 | |
| Maximum Junction-to-Ambient (steady state, from note d) | RthJA | 50 | °C/W | Steady state conditions (note d) | 1 | ||
| Maximum Junction-to-Case Steady State | RthJC | 1.5 | 1.8 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 25 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Turn-On Delay Time | td(on) | 10 | 15 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 10 | 15 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 15 | 25 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 15 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 50 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 40 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 10 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 50 | 75 | ns | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 100 | 150 | nC | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
IPD78CN10N G-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd78cn10n-g-vb-etched.step/ipd78cn10n-g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd78cn10n-g-vb.step/ipd78cn10n-g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
6277b080e9a745a0, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPD78CN10N G-VB
**VBsemi Elec** · MOSFETs · TO-252
IPD78CN10N G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V (VGS). |
| 2 | D | passive | Drain of the N-channel MOSFET; the datasheet rates the drain-source voltage at 100 V (VDS) and the continuous drain current at 25 A at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET; the datasheet rates the continuous source-drain diode current at 50 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 25 | A | TC = 25 °C (TJ = 175 °C) | 1 |
| Continuous Drain Current | ID | | | 20 | A | TC = 70 °C | 1 |
| Continuous Drain Current | ID | | | 12 | A | TA = 25 °C, notes b, c | 1 |
| Continuous Drain Current | ID | | | 10 | A | TA = 70 °C, notes b, c | 1 |
| Pulsed Drain Current | IDM | | | 75 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | 50 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 6.9 | A | TA = 25 °C, notes b, c | 1 |
| Avalanche Current Pulse | IAS | | | 33 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 55 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 83 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 58 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 8.3 | W | TA = 25 °C, notes b, c | 1 |
| Maximum Power Dissipation | PD | | | 5.8 | W | TA = 70 °C, notes b, c | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 15 | 18 | °C/W | t ≤ 10 s, notes b, d | 1 |
| Maximum Junction-to-Ambient (steady state, from note d) | RthJA | | | 50 | °C/W | Steady state conditions (note d) | 1 |
| Maximum Junction-to-Case Steady State | RthJC | | 1.5 | 1.8 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | | 3.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 25 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Turn-On Delay Time | td(on) | | 10 | 15 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 10 | 15 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 15 | 25 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 10 | 15 | ns | VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS | | | 50 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | 40 | A | | 2 |
| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 10 A | 2 |
| Body Diode Reverse Recovery Time | trr | | 50 | 75 | ns | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 100 | 150 | nC | IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C | 2 |
## CAD (KiCad official)
- Symbol: `IPD78CN10N G-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ipd78cn10n-g-vb-etched.step` / `ipd78cn10n-g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd78cn10n-g-vb.step` / `ipd78cn10n-g-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603178418355912704) (9 pp, sha256 `6277b080e9a745a0`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipd78cn10n-g-vb-datasheet.pdf)