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IPD78CN10N G-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD78CN10N G-VB

VBsemi Elec · MOSFETs · TO-252

IPD78CN10N G-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V (VGS).
2 D passive Drain of the N-channel MOSFET; the datasheet rates the drain-source voltage at 100 V (VDS) and the continuous drain current at 25 A at TC = 25 °C.
3 S passive Source of the N-channel MOSFET; the datasheet rates the continuous source-drain diode current at 50 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 25 A TC = 25 °C (TJ = 175 °C) 1
Continuous Drain Current ID 20 A TC = 70 °C 1
Continuous Drain Current ID 12 A TA = 25 °C, notes b, c 1
Continuous Drain Current ID 10 A TA = 70 °C, notes b, c 1
Pulsed Drain Current IDM 75 A 1
Continuous Source-Drain Diode Current IS 50 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 6.9 A TA = 25 °C, notes b, c 1
Avalanche Current Pulse IAS 33 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 55 mJ 1
Maximum Power Dissipation PD 83 W TC = 25 °C 1
Maximum Power Dissipation PD 58 W TC = 70 °C 1
Maximum Power Dissipation PD 8.3 W TA = 25 °C, notes b, c 1
Maximum Power Dissipation PD 5.8 W TA = 70 °C, notes b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient RthJA 15 18 °C/W t ≤ 10 s, notes b, d 1
Maximum Junction-to-Ambient (steady state, from note d) RthJA 50 °C/W Steady state conditions (note d) 1
Maximum Junction-to-Case Steady State RthJC 1.5 1.8 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1 3.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 25 A VDS ≥ 5 V, VGS = 10 V 2
Turn-On Delay Time td(on) 10 15 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 10 15 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 15 25 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 50 V, RL = 5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 50 A TC = 25 °C 2
Pulse Diode Forward Current ISM 40 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 10 A 2
Body Diode Reverse Recovery Time trr 50 75 ns IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 100 150 nC IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: IPD78CN10N G-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd78cn10n-g-vb-etched.step / ipd78cn10n-g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd78cn10n-g-vb.step / ipd78cn10n-g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 6277b080e9a745a0, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF