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IPD65R400CE

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD65R400CE

Infineon Technologies · MOSFETs · TO-252

IPD65R400CE from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the MOSFET, with VGS limited to ±20 V static and ±30 V dynamic (AC, f>1 Hz), and an internal gate resistance RG of 7.5 Ω typical.
2 Drain passive Drain of the MOSFET, electrically connected to the tab, rated for VDS up to 700 V at Tj,max with continuous drain current ID of 15.1 A at TC=25°C.
3 Source passive Source of the MOSFET, serving as the reference for the gate-source voltage ratings (VGS ±20 V static, ±30 V dynamic).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.32mA 5
Zero gate voltage drain current IDSS 10 µA VDS=650,VGS=0V,Tj=25°C 5
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance RDS(on) 0.36 0.4 Ω VGS=10V,ID=3.2435A,Tj=25°C 5
Continuous drain current (TC=25°C) ID 15.1 A TC=25°C 3
Continuous drain current (TC=100°C) ID 9.5 A TC=100°C 3
Pulsed drain current ID,pulse 30 A TC=25°C 3
Avalanche energy, single pulse EAS 215 mJ ID=1.8A; VDD=50V; see table 10 3
Avalanche energy, repetitive EAR 0.32 mJ ID=1.8A; VDD=50V; see table 10 3
Avalanche current, repetitive IAR 1.8 A 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V 3
Gate source voltage (static) VGS -20 20 V static; 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation (Non FullPAK), TO-252, TO-251 Ptot 118 W TC=25°C 3
Storage temperature Tstg -55 150 °C 3
Operating junction temperature Tj -55 150 °C 3
Continuous diode forward current IS 10.6 A TC=25°C 3
Diode pulse current IS,pulse 30 A TC=25°C 3
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C 3
Maximum diode commutation speed dif/dt 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C 3
Thermal resistance, junction - case RthJC 1.06 °C/W 4
Thermal resistance, junction - ambient RthJA 62 °C/W leaded 4
Soldering temperature, wavesoldering Tsold 260 °C only allowed at leads; 1.6mm (0.063 in.) from case for 10s 4

CAD (KiCad official)

  • Symbol: IPD65R400CE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd65r400ce-etched.step / ipd65r400ce-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd65r400ce.step / ipd65r400ce.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (15 pp, sha256 36ff661b1699d43d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF