# IPD60R600P7S E8228

**Infineon Technologies** · MOSFETs · TO-252-2(DPAK)

IPD60R600P7S E8228 from Infineon Technologies, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin; static gate-source voltage limited to ±20 V (±30 V dynamic AC, f>1 Hz), with threshold voltage 3 V min to 4 V max at ID=0.08 mA. |
| 2 | Drain | passive | Drain pin, also connected to the tab; drain-source breakdown voltage 600 V min, continuous drain current 6 A at TC=25°C. |
| 3 | Source | passive | Source pin; continuous diode forward current up to 6 A at TC=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252-2(DPAK) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 6 | A | TC=25°C | 3 |
| Continuous drain current | ID |  |  | 4 | A | TC=100°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 16 | A | TC=25°C | 3 |
| Avalanche energy, single pulse | EAS |  |  | 17 | mJ | ID=1.6A; VDD=50V | 3 |
| Avalanche energy, repetitive | EAR |  |  | 0.08 | mJ | ID=1.6A; VDD=50V | 3 |
| Avalanche current, single pulse | IAS |  |  | 1.6 | A |  | 3 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 80 | V/ns | VDS=0...400V | 3 |
| Gate source voltage (static) | VGS | -20 |  | 20 | V | static | 3 |
| Gate source voltage (dynamic) | VGS | -30 |  | 30 | V | AC (f>1 Hz) | 3 |
| Power dissipation | Ptot |  |  | 30 | W | TC=25°C | 3 |
| Storage temperature | Tstg | -40 |  | 150 | °C |  | 3 |
| Operating junction temperature | Tj | -40 |  | 150 | °C |  | 3 |
| Continuous diode forward current | IS |  |  | 6 | A | TC=25°C | 3 |
| Diode pulse current | IS,pulse |  |  | 16 | A | TC=25°C | 3 |
| Reverse diode dv/dt | dv/dt |  |  | 50 | V/ns | VDS=0...400V,ISD<=6A,Tj=25°C | 3 |
| Maximum diode commutation speed | diF/dt |  |  | 900 | A/µs | VDS=0...400V,ISD<=6A,Tj=25°C | 3 |
| Thermal resistance, junction-case | RthJC |  |  | 4.19 | °C/W |  | 4 |
| Thermal resistance, junction-ambient | RthJA |  |  | 62 | °C/W | device on PCB, minimal footprint | 4 |
| Thermal resistance, junction-ambient for SMD version | RthJA |  | 35 | 45 | °C/W | Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² copper | 4 |
| Soldering temperature | Tsold |  |  | 260 | °C | reflow MSL3 | 4 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | VGS=0V,ID=1mA | 5 |
| Gate threshold voltage | V(GS)th | 3 | 3.5 | 4 | V | VDS=VGS,ID=0.08mA | 5 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS=600V,VGS=0V,Tj=25°C | 5 |
| Zero gate voltage drain current | IDSS |  | 10 |  | µA | VDS=600V,VGS=0V,Tj=150°C | 5 |
| Gate-source leakage current | IGSS |  |  | 1000 | nA | VGS=20V,VDS=0V | 5 |
| Drain-source on-state resistance | RDS(on) |  | 0.49 | 0.6 | Ω | VGS=10V,ID=1.7A,Tj=25°C | 5 |
| Drain-source on-state resistance | RDS(on) |  | 1.152 |  | Ω | VGS=10V,ID=1.7A,Tj=150°C | 5 |
| Gate resistance | RG |  | 6.3 |  | Ω | f=1MHz,open drain | 5 |
| Input capacitance | Ciss |  | 363 |  | pF | VGS=0V,VDS=400V,f=250kHz | 5 |
| Output capacitance | Coss |  | 7 |  | pF | VGS=0V,VDS=400V,f=250kHz | 5 |
| Effective output capacitance, energy related | Co(er) |  | 14 |  | pF | VGS=0V,VDS=0...400V | 5 |
| Effective output capacitance, time related | Co(tr) |  | 149 |  | pF | ID=constant,VGS=0V,VDS=0...400V | 5 |
| Turn-on delay time | td(on) |  | 7 |  | ns | VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω | 5 |
| Rise time | tr |  | 6 |  | ns | VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω | 5 |
| Turn-off delay time | td(off) |  | 37 |  | ns | VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω | 5 |
| Fall time | tf |  | 19 |  | ns | VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω | 5 |
| Gate to source charge | Qgs |  | 2 |  | nC | VDD=400V,ID=1.7A,VGS=0to10V | 5 |
| Gate to drain charge | Qgd |  | 3 |  | nC | VDD=400V,ID=1.7A,VGS=0to10V | 5 |
| Gate charge total | Qg |  | 9 |  | nC | VDD=400V,ID=1.7A,VGS=0to10V | 5 |
| Gate plateau voltage | Vplateau |  | 5.2 |  | V | VDD=400V,ID=1.7A,VGS=0to10V | 5 |
| Diode forward voltage | VSD |  | 0.9 |  | V | VGS=0V,IF=1.7A,Tj=25°C | 6 |
| Reverse recovery time | trr |  | 160 |  | ns | VR=400V,IF=1A,diF/dt=100A/µs | 6 |
| Reverse recovery charge | Qrr |  | 0.71 |  | µC | VR=400V,IF=1A,diF/dt=100A/µs | 6 |
| Peak reverse recovery current | Irrm |  | 9.9 |  | A | VR=400V,IF=1A,diF/dt=100A/µs | 6 |

## CAD (KiCad official)

- Symbol: `IPD60R600P7S E8228`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
- 3D model files: `ipd60r600p7s-e8228-etched.step` / `ipd60r600p7s-e8228-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd60r600p7s-e8228.step` / `ipd60r600p7s-e8228.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ipd60r600p7s-e8228-datasheet.pdf) (14 pp, sha256 `3ac7cc283d1b75e9`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipd60r600p7s-e8228-datasheet.pdf)