component

IPD60R600P7S E8228

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripd60r600p7s e8228factory-2.0.0extractor-text

Verified IPD60R600P7S E8228

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPD60R600P7S E8228 · TO-252-2(DPAK) · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 14-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-d0el_tut/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipd60r600p7s-e8228.kicad_sym✓ ipd60r600p7s-e8228.kicad_mod✓ ipd60r600p7s-e8228.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers ipd60r600p7s-e8228: viewers · Ray 7d ago
ipd60r600p7s-e8228-etched.glb Publish 0.1.0 · Ray 7d ago
ipd60r600p7s-e8228-etched.step ipd60r600p7s-e8228: factory component page (tier=mfr) · Ray 7d ago
ipd60r600p7s-e8228-hero.glb ipd60r600p7s-e8228: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
ipd60r600p7s-e8228-hero.overlay.json Publish 0.1.0 · Ray 7d ago
ipd60r600p7s-e8228.glb Publish 0.1.0 · Ray 7d ago
ipd60r600p7s-e8228.kicad_mod Publish 0.1.0 · Ray 7d ago
ipd60r600p7s-e8228.kicad_sym Publish 0.1.0 · Ray 7d ago
ipd60r600p7s-e8228.lbr Publish 0.1.0 · Ray 7d ago
ipd60r600p7s-e8228.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 7d ago

IPD60R600P7S E8228

Infineon Technologies · MOSFETs · TO-252-2(DPAK)

IPD60R600P7S E8228 from Infineon Technologies, in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin; static gate-source voltage limited to ±20 V (±30 V dynamic AC, f>1 Hz), with threshold voltage 3 V min to 4 V max at ID=0.08 mA.
2 Drain passive Drain pin, also connected to the tab; drain-source breakdown voltage 600 V min, continuous drain current 6 A at TC=25°C.
3 Source passive Source pin; continuous diode forward current up to 6 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252-2(DPAK)
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 6 A TC=25°C 3
Continuous drain current ID 4 A TC=100°C 3
Pulsed drain current ID,pulse 16 A TC=25°C 3
Avalanche energy, single pulse EAS 17 mJ ID=1.6A; VDD=50V 3
Avalanche energy, repetitive EAR 0.08 mJ ID=1.6A; VDD=50V 3
Avalanche current, single pulse IAS 1.6 A 3
MOSFET dv/dt ruggedness dv/dt 80 V/ns VDS=0...400V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation Ptot 30 W TC=25°C 3
Storage temperature Tstg -40 150 °C 3
Operating junction temperature Tj -40 150 °C 3
Continuous diode forward current IS 6 A TC=25°C 3
Diode pulse current IS,pulse 16 A TC=25°C 3
Reverse diode dv/dt dv/dt 50 V/ns VDS=0...400V,ISD<=6A,Tj=25°C 3
Maximum diode commutation speed diF/dt 900 A/µs VDS=0...400V,ISD<=6A,Tj=25°C 3
Thermal resistance, junction-case RthJC 4.19 °C/W 4
Thermal resistance, junction-ambient RthJA 62 °C/W device on PCB, minimal footprint 4
Thermal resistance, junction-ambient for SMD version RthJA 35 45 °C/W Device on 40mm40mm1.5mm epoxy PCB FR4 with 6cm² copper 4
Soldering temperature Tsold 260 °C reflow MSL3 4
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V,ID=1mA 5
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.08mA 5
Zero gate voltage drain current IDSS 1 µA VDS=600V,VGS=0V,Tj=25°C 5
Zero gate voltage drain current IDSS 10 µA VDS=600V,VGS=0V,Tj=150°C 5
Gate-source leakage current IGSS 1000 nA VGS=20V,VDS=0V 5
Drain-source on-state resistance RDS(on) 0.49 0.6 Ω VGS=10V,ID=1.7A,Tj=25°C 5
Drain-source on-state resistance RDS(on) 1.152 Ω VGS=10V,ID=1.7A,Tj=150°C 5
Gate resistance RG 6.3 Ω f=1MHz,open drain 5
Input capacitance Ciss 363 pF VGS=0V,VDS=400V,f=250kHz 5
Output capacitance Coss 7 pF VGS=0V,VDS=400V,f=250kHz 5
Effective output capacitance, energy related Co(er) 14 pF VGS=0V,VDS=0...400V 5
Effective output capacitance, time related Co(tr) 149 pF ID=constant,VGS=0V,VDS=0...400V 5
Turn-on delay time td(on) 7 ns VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω 5
Rise time tr 6 ns VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω 5
Turn-off delay time td(off) 37 ns VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω 5
Fall time tf 19 ns VDD=400V,VGS=13V,ID=1.7A,RG=10.0Ω 5
Gate to source charge Qgs 2 nC VDD=400V,ID=1.7A,VGS=0to10V 5
Gate to drain charge Qgd 3 nC VDD=400V,ID=1.7A,VGS=0to10V 5
Gate charge total Qg 9 nC VDD=400V,ID=1.7A,VGS=0to10V 5
Gate plateau voltage Vplateau 5.2 V VDD=400V,ID=1.7A,VGS=0to10V 5
Diode forward voltage VSD 0.9 V VGS=0V,IF=1.7A,Tj=25°C 6
Reverse recovery time trr 160 ns VR=400V,IF=1A,diF/dt=100A/µs 6
Reverse recovery charge Qrr 0.71 µC VR=400V,IF=1A,diF/dt=100A/µs 6
Peak reverse recovery current Irrm 9.9 A VR=400V,IF=1A,diF/dt=100A/µs 6

CAD (KiCad official)

  • Symbol: IPD60R600P7S E8228
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: ipd60r600p7s-e8228-etched.step / ipd60r600p7s-e8228-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd60r600p7s-e8228.step / ipd60r600p7s-e8228.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (14 pp, sha256 3ac7cc283d1b75e9, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF