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IPD50P04P4L11
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IPD50P04P4L11
UMW · MOSFETs · TO-252
IPD50P04P4L11 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the gate-source voltage is rated ±16 V (VGS), and +16 V is allowed for a maximum of 168 h at TJ = 175 °C. |
| 2 | D | passive | DRAIN terminal, electrically connected to the tab; the device is rated VDS = -40 V with continuous drain current ID = -50 A at TC = 25 °C (VGS = -10 V). |
| 3 | S | passive | SOURCE terminal; the datasheet gives no source-specific limit, only the device ratings of VDS = -40 V and VGS = ±16 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -40 | V | VGS=0V, ID=-1mA | 2 | ||
| Gate threshold voltage | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS, ID=-85µA | 2 |
| Zero gate voltage drain current, TJ=25°C | IDSS | -0.03 | -1 | µA | VDS=-32V, VGS=0V, TJ=25°C | 2 | |
| Zero gate voltage drain current, TJ=125°C | IDSS | -7 | -70 | µA | VDS=-32V,VGS=0V,TJ=125°C | 2 | |
| Gate-source leakage current | IGSS | -100 | nA | VGS=-16V, VDS=0V | 2 | ||
| Drain-source on-state resistance (VGS=-4.5V) | RDS(ON) | 12.3 | 17.2 | mΩ | VGS=-4.5V, ID=-30A | 2 | |
| Drain-source on-state resistance (VGS=-10V) | RDS(ON) | 8.2 | 10.6 | mΩ | VGS=-10V, ID=-50A | 2 | |
| Input capacitance | Ciss | 3000 | 3900 | pF | VGS=0V, VDS=-25V, f=1MHz | 2 | |
| Output capacitance | Coss | 1100 | 1400 | pF | VGS=0V, VDS=-25V, f=1MHz | 2 | |
| Reverse transfer capacitance | Crss | 37 | 74 | pF | VGS=0V, VDS=-25V, f=1MHz | 2 | |
| Turn-on delay time | tD(on) | 12 | 14 | ns | VDD=-20V, VGS=-10V, ID=-50A, RG=3.5Ω | 2 | |
| Rise time | tr | 9 | 16 | ns | VDD=-20V, VGS=-10V, ID=-50A, RG=3.5Ω | 2 | |
| Turn-off delay time | tD(off) | 46 | 59 | ns | VDD=-20V, VGS=-10V, ID=-50A, RG=3.5Ω | 2 | |
| Diode forward voltage | VSD | -1 | -1.3 | V | VGS=0V, IF=-50A, TJ=25°C | 3 | |
| Diode continuous forward current | IS | -50 | A | TC=25°C | 2 | ||
| Diode pulse current | Is,pulse | -200 | A | 2 | |||
| Thermal resistance, junction-case | RthJC | 2.6 | K/W | 2 | |||
| Thermal resistance, junction-ambient (SMD, device on PCB, minimal footprint) | RthJA | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 | ||
| Thermal resistance, junction-ambient (SMD, device on PCB, 6 cm² cooling area) | RthJA | 40 | K/W | SMD version, device on PCB, 6 cm² cooling area | 2 | ||
| Continuous drain current (TC=25°C) | ID | -50 | A | TC=25°C, VGS=-10V | 1 | ||
| Continuous drain current (TC=100°C) | ID | -40 | A | TC=100°C, VGS=-10V | 1 | ||
| Pulsed drain current | ID,pulse | -200 | A | 1 | |||
| Avalanche energy, single pulse | EAS | 18 | mJ | ID=-25A | 1 | ||
| Avalanche current, single pulse | IAS | -50 | A | 1 | |||
| Gate-source voltage | VGS | -16 | 16 | V | 1 | ||
| Power dissipation | Ptot | 58 | W | TC=25°C | 1 | ||
| Operating junction and storage temperature | TJ,TSTG | -55 | 175 | °C | 1 |
CAD (KiCad official)
- Symbol:
IPD50P04P4L11 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd50p04p4l11-etched.step/ipd50p04p4l11-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd50p04p4l11.step/ipd50p04p4l11.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
6d93913bdb4f88fd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IPD50P04P4L11
**UMW** · MOSFETs · TO-252
IPD50P04P4L11 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the gate-source voltage is rated ±16 V (VGS), and +16 V is allowed for a maximum of 168 h at TJ = 175 °C. |
| 2 | D | passive | DRAIN terminal, electrically connected to the tab; the device is rated VDS = -40 V with continuous drain current ID = -50 A at TC = 25 °C (VGS = -10 V). |
| 3 | S | passive | SOURCE terminal; the datasheet gives no source-specific limit, only the device ratings of VDS = -40 V and VGS = ±16 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -40 | | | V | VGS=0V, ID=-1mA | 2 |
| Gate threshold voltage | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS, ID=-85µA | 2 |
| Zero gate voltage drain current, TJ=25°C | IDSS | | -0.03 | -1 | µA | VDS=-32V, VGS=0V, TJ=25°C | 2 |
| Zero gate voltage drain current, TJ=125°C | IDSS | | -7 | -70 | µA | VDS=-32V,VGS=0V,TJ=125°C | 2 |
| Gate-source leakage current | IGSS | | | -100 | nA | VGS=-16V, VDS=0V | 2 |
| Drain-source on-state resistance (VGS=-4.5V) | RDS(ON) | | 12.3 | 17.2 | mΩ | VGS=-4.5V, ID=-30A | 2 |
| Drain-source on-state resistance (VGS=-10V) | RDS(ON) | | 8.2 | 10.6 | mΩ | VGS=-10V, ID=-50A | 2 |
| Input capacitance | Ciss | | 3000 | 3900 | pF | VGS=0V, VDS=-25V, f=1MHz | 2 |
| Output capacitance | Coss | | 1100 | 1400 | pF | VGS=0V, VDS=-25V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss | | 37 | 74 | pF | VGS=0V, VDS=-25V, f=1MHz | 2 |
| Turn-on delay time | tD(on) | | 12 | 14 | ns | VDD=-20V, VGS=-10V, ID=-50A, RG=3.5Ω | 2 |
| Rise time | tr | | 9 | 16 | ns | VDD=-20V, VGS=-10V, ID=-50A, RG=3.5Ω | 2 |
| Turn-off delay time | tD(off) | | 46 | 59 | ns | VDD=-20V, VGS=-10V, ID=-50A, RG=3.5Ω | 2 |
| Diode forward voltage | VSD | | -1 | -1.3 | V | VGS=0V, IF=-50A, TJ=25°C | 3 |
| Diode continuous forward current | IS | | | -50 | A | TC=25°C | 2 |
| Diode pulse current | Is,pulse | | | -200 | A | | 2 |
| Thermal resistance, junction-case | RthJC | | | 2.6 | K/W | | 2 |
| Thermal resistance, junction-ambient (SMD, device on PCB, minimal footprint) | RthJA | | | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 |
| Thermal resistance, junction-ambient (SMD, device on PCB, 6 cm² cooling area) | RthJA | | | 40 | K/W | SMD version, device on PCB, 6 cm² cooling area | 2 |
| Continuous drain current (TC=25°C) | ID | -50 | | | A | TC=25°C, VGS=-10V | 1 |
| Continuous drain current (TC=100°C) | ID | -40 | | | A | TC=100°C, VGS=-10V | 1 |
| Pulsed drain current | ID,pulse | -200 | | | A | | 1 |
| Avalanche energy, single pulse | EAS | | | 18 | mJ | ID=-25A | 1 |
| Avalanche current, single pulse | IAS | -50 | | | A | | 1 |
| Gate-source voltage | VGS | -16 | | 16 | V | | 1 |
| Power dissipation | Ptot | | | 58 | W | TC=25°C | 1 |
| Operating junction and storage temperature | TJ,TSTG | -55 | | 175 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `IPD50P04P4L11`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ipd50p04p4l11-etched.step` / `ipd50p04p4l11-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd50p04p4l11.step` / `ipd50p04p4l11.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755878233784881152) (10 pp, sha256 `6d93913bdb4f88fd`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ipd50p04p4l11-datasheet.pdf)