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IPD50P04P4L11

Public Made by Adom

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UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD50P04P4L11

UMW · MOSFETs · TO-252

IPD50P04P4L11 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal; the gate-source voltage is rated ±16 V (VGS), and +16 V is allowed for a maximum of 168 h at TJ = 175 °C.
2 D passive DRAIN terminal, electrically connected to the tab; the device is rated VDS = -40 V with continuous drain current ID = -50 A at TC = 25 °C (VGS = -10 V).
3 S passive SOURCE terminal; the datasheet gives no source-specific limit, only the device ratings of VDS = -40 V and VGS = ±16 V.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS -40 V VGS=0V, ID=-1mA 2
Gate threshold voltage VGS(th) -1.2 -1.7 -2.2 V VDS=VGS, ID=-85µA 2
Zero gate voltage drain current, TJ=25°C IDSS -0.03 -1 µA VDS=-32V, VGS=0V, TJ=25°C 2
Zero gate voltage drain current, TJ=125°C IDSS -7 -70 µA VDS=-32V,VGS=0V,TJ=125°C 2
Gate-source leakage current IGSS -100 nA VGS=-16V, VDS=0V 2
Drain-source on-state resistance (VGS=-4.5V) RDS(ON) 12.3 17.2 mΩ VGS=-4.5V, ID=-30A 2
Drain-source on-state resistance (VGS=-10V) RDS(ON) 8.2 10.6 mΩ VGS=-10V, ID=-50A 2
Input capacitance Ciss 3000 3900 pF VGS=0V, VDS=-25V, f=1MHz 2
Output capacitance Coss 1100 1400 pF VGS=0V, VDS=-25V, f=1MHz 2
Reverse transfer capacitance Crss 37 74 pF VGS=0V, VDS=-25V, f=1MHz 2
Turn-on delay time tD(on) 12 14 ns VDD=-20V, VGS=-10V, ID=-50A, RG=3.5Ω 2
Rise time tr 9 16 ns VDD=-20V, VGS=-10V, ID=-50A, RG=3.5Ω 2
Turn-off delay time tD(off) 46 59 ns VDD=-20V, VGS=-10V, ID=-50A, RG=3.5Ω 2
Diode forward voltage VSD -1 -1.3 V VGS=0V, IF=-50A, TJ=25°C 3
Diode continuous forward current IS -50 A TC=25°C 2
Diode pulse current Is,pulse -200 A 2
Thermal resistance, junction-case RthJC 2.6 K/W 2
Thermal resistance, junction-ambient (SMD, device on PCB, minimal footprint) RthJA 62 K/W SMD version, device on PCB, minimal footprint 2
Thermal resistance, junction-ambient (SMD, device on PCB, 6 cm² cooling area) RthJA 40 K/W SMD version, device on PCB, 6 cm² cooling area 2
Continuous drain current (TC=25°C) ID -50 A TC=25°C, VGS=-10V 1
Continuous drain current (TC=100°C) ID -40 A TC=100°C, VGS=-10V 1
Pulsed drain current ID,pulse -200 A 1
Avalanche energy, single pulse EAS 18 mJ ID=-25A 1
Avalanche current, single pulse IAS -50 A 1
Gate-source voltage VGS -16 16 V 1
Power dissipation Ptot 58 W TC=25°C 1
Operating junction and storage temperature TJ,TSTG -55 175 °C 1

CAD (KiCad official)

  • Symbol: IPD50P04P4L11
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd50p04p4l11-etched.step / ipd50p04p4l11-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd50p04p4l11.step / ipd50p04p4l11.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 6d93913bdb4f88fd, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF