component
IPD50P04P413ATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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"description": "Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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"component": {
"mpn": "IPD50P04P413ATMA1",
"manufacturer": "Infineon Technologies",
"package": "TO-252",
"pin_count": 3,
"category": "Triode/MOS Tube/Transistor",
"subcategory": "MOSFETs",
"datasheet": "https://www.infineon.com/dgdl/Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t",
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"digikey": "IPD50P04P413ATMA1TR-ND",
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"pins": [
{
"number": "1",
"name": "Gate",
"type": "input",
"description": "Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V (V GS) and the gate threshold is -2.0 V to -4.0 V at V DS = V GS, I D = -85 µA."
},
{
"number": "2",
"name": "Drain",
"type": "passive",
"description": "Drain of the MOSFET, also connected to the metal tab; drain-source voltage is -40 V (V(BR)DSS minimum -40 V) and continuous drain current is -50 A at T C = 25 °C with V GS = -10 V."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source of the MOSFET and the reference for the gate-source voltage; maximum junction and storage temperature range is -55 °C to +175 °C."
}
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