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IPD50P04P413ATMA1

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripd50p04p413atma1factory-2.0.0extractor-text

Verified IPD50P04P413ATMA1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPD50P04P413ATMA1 · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • ✓distributor: lcsc C672294, digikey IPD50P04P413ATMA1TR-ND, mouser 726-IPD50P04P413ATMA
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-ba7e96mr/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipd50p04p413atma1.kicad_sym✓ ipd50p04p413atma1.kicad_mod✓ ipd50p04p413atma1.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers ipd50p04p413atma1: viewers · Ray 7d ago
ipd50p04p413atma1-etched.glb Publish 0.1.0 · Ray 7d ago
ipd50p04p413atma1-etched.step ipd50p04p413atma1: factory component page (tier=mfr) · Ray 7d ago
ipd50p04p413atma1-hero.glb ipd50p04p413atma1: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
ipd50p04p413atma1-hero.overlay.json Publish 0.1.0 · Ray 7d ago
ipd50p04p413atma1.glb Publish 0.1.0 · Ray 7d ago
ipd50p04p413atma1.kicad_mod Publish 0.1.0 · Ray 7d ago
ipd50p04p413atma1.kicad_sym Publish 0.1.0 · Ray 7d ago
ipd50p04p413atma1.lbr Publish 0.1.0 · Ray 7d ago
ipd50p04p413atma1.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 7d ago

IPD50P04P413ATMA1

Infineon Technologies · MOSFETs · TO-252

IPD50P04P413ATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET; gate-source voltage is rated at ±20 V (V GS) and the gate threshold is -2.0 V to -4.0 V at V DS = V GS, I D = -85 µA.
2 Drain passive Drain of the MOSFET, also connected to the metal tab; drain-source voltage is -40 V (V(BR)DSS minimum -40 V) and continuous drain current is -50 A at T C = 25 °C with V GS = -10 V.
3 Source passive Source of the MOSFET and the reference for the gate-source voltage; maximum junction and storage temperature range is -55 °C to +175 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (TC=25°C) ID -50 A TC=25°C, VGS=-10V 1
Continuous drain current (TC=100°C) ID -45 A TC=100°C, VGS=-10V 1
Pulsed drain current ID,pulse -200 A TC=25°C 1
Avalanche energy, single pulse EAS 18 mJ ID=-25A 1
Avalanche current, single pulse IAS -50 A single pulse 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 58 W TC=25 °C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction - case RthJC 2.6 K/W 2
Thermal resistance, junction - ambient (SMD, device on PCB) RthJA 62 K/W SMD version, device on PCB, minimal footprint 2
Thermal resistance, junction - ambient (SMD, device on PCB) RthJA 40 K/W 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS -40 V VGS=0V, ID=-1mA 2
Gate threshold voltage VGS(th) -2 -3 -4 V VDS=VGS, ID=-85µA 2
Zero gate voltage drain current IDSS -0.05 -1 µA VDS=-32V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS -20 -200 µA VDS=-32V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS -100 nA VGS=-20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 9.2 12.6 mW VGS=-10V, ID=-50A 2
Input capacitance Ciss 2820 3670 pF VGS=0V, VDS=-25V, f=1MHz 3
Output capacitance Coss 1000 1500 pF VGS=0V, VDS=-25V, f=1MHz 3
Reverse transfer capacitance Crss 30 60 pF VGS=0V, VDS=-25V, f=1MHz 3
Gate to source charge Qgs 14 19 nC VDD=-32V, ID=-50A, VGS=0 to -10V 3
Gate to drain charge Qgd 7 14 nC VDD=-32V, ID=-50A, VGS=0 to -10V 3
Gate charge total Qg 39 51 nC VDD=-32V, ID=-50A, VGS=0 to -10V 3
Diode continuous forward current IS -50 A 3
Diode pulse current IS,pulse -200 A 3
Diode forward voltage VSD -1 -1.3 V VGS=0V, IF=-50A, Tj=25°C 3

CAD (KiCad official)

  • Symbol: IPD50P04P413ATMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd50p04p413atma1-etched.step / ipd50p04p413atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd50p04p413atma1.step / ipd50p04p413atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 6948c8870dffc3a0, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF