component
IPD50N10S3L16
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IPD50N10S3L16
Infineon Technologies · MOSFETs · TO-252
IPD50N10S3L16 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage is rated ±20 V (VGS(th) 1.2 to 2.4 V at ID=60 µA). |
| 2 | D | passive | Drain pin, also the tab; VDS is 100 V and continuous drain current is 50 A at TC=25 °C. |
| 3 | S | passive | Source pin; carries the 50 A continuous drain current at TC=25 °C, VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=1mA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.2 | 1.7 | 2.4 | V | VDS=VGS, ID=60µA | 2 |
| Zero gate voltage drain current | IDSS | 0.01 | 0.1 | µA | VDS=80V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 0.1 | 10 | µA | VDS=80V, VGS=0V, Tj=125°C | 2 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=16V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 15.3 | 19.9 | mW | VGS=4.5V, ID=50A | 2 | |
| Drain-source on-state resistance | RDS(on) | 12.5 | 15 | mW | VGS=10 V, ID=50 A | 2 | |
| Input capacitance | Ciss | 3215 | 4180 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Output capacitance | Coss | 730 | 950 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 63 | 95 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Gate to source charge | Qgs | 9 | 12 | nC | VDD=80V, ID=50A, VGS=0 to 10V | 3 | |
| Gate to drain charge | Qgd | 8 | 12 | nC | VDD=80V, ID=50A, VGS=0 to 10V | 3 | |
| Gate charge total | Qg | 49 | 64 | nC | VDD=80V, ID=50A, VGS=0 to 10V | 3 | |
| Diode continuous forward current | IS | 50 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 200 | A | TC=25°C | 3 | ||
| Diode forward voltage | VSD | 0.6 | 1 | 1.2 | V | VGS=0V, IF=50A, Tj=25°C | 3 |
| Thermal resistance, junction - case | RthJC | 1.5 | K/W | 2 | |||
| Thermal resistance, junction - ambient | RthJA | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 40 | K/W | SMD version, device on PCB, 6 cm2 cooling area | 2 | ||
| Continuous drain current | ID | 50 | A | TC=25°C, VGS=10V | 1 | ||
| Continuous drain current | ID | 38 | A | TC=100°C, VGS=10V | 1 | ||
| Pulsed drain current | ID,pulse | 200 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 330 | mJ | ID=25A | 1 | ||
| Avalanche current, single pulse | IAS | 50 | A | 1 | |||
| Gate source voltage | VGS | -20 | 20 | V | -5V to -20V for max. 168 non-consecutive hours | 1 | |
| Power dissipation | Ptot | 100 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Drain-source voltage | VDS | 100 | V | Product summary | 1 | ||
| Turn-on delay time | td(on) | 10 | ns | VDD=20V, VGS=10V, ID=50A, RG=3.5W | 3 | ||
| Rise time | tr | 5 | ns | VDD=20V, VGS=10V, ID=50A, RG=3.5W | 3 | ||
| Turn-off delay time | td(off) | 29 | ns | VDD=20V, VGS=10V, ID=50A, RG=3.5W | 3 | ||
| Fall time | tf | 5 | ns | VDD=20V, VGS=10V, ID=50A, RG=3.5W | 3 | ||
| Gate plateau voltage | Vplateau | 3.7 | V | VDD=80V, ID=50A, VGS=0 to 10V | 3 | ||
| Reverse recovery time | trr | 97 | ns | VR=50V, IF=IS, diF/dt=100A/µs | 3 | ||
| Reverse recovery charge | Qrr | 178 | nC | VR=50V, IF=IS, diF/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
IPD50N10S3L16 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ipd50n10s3l16-etched.step/ipd50n10s3l16-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd50n10s3l16.step/ipd50n10s3l16.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
4aa19cc6c1e9c1ba, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).