main
Ray Set visibility: public 555bdde 7d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "ipd30n10s3l34-hxy",
  "title": "IPD30N10S3L34-HXY",
  "brief": "HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "triode-mos tube-transistor",
    "ipd30n10s3l34-hxy",
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  "component": {
    "mpn": "IPD30N10S3L34-HXY",
    "manufacturer": "HXY MOSFET",
    "package": "TO-252-2L",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/9ecd3ff07cc09ca9daccffeadd8961cb.pdf",
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    "distributor_links": {
      "lcsc": "C22367069"
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    "distributor_check": {
      "checked_at": "2026-10-30T19:13:12Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
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    },
    "pins": [
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        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±20 V with a gate threshold VGS(th) of 1.0 to 2.2 V at VDS=VGS and ID=250μA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 100 V and a continuous drain current ID of 30 A at TC=25℃."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet gives no source-specific limit, with body diode continuous forward current IS of 27 A maximum and VSD of 1.2 V maximum at IS=20A."
      }
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    "provenance": {
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        "primary_model": "claude-haiku-5-5",
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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        "pages_sent": 6,
        "cost_usd": 0.0281,
        "at": "2026-10-30T19:13:05"
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        "pages": 6,
        "sha256": "a2a4ddbd2a64de35",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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      "footprint": "viewers/footprint.html"
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-30",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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      {
        "file": "ipd30n10s3l34-hxy-etched.step",
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        "sha256": "2c0b2472f371aaeef46758c4cb32791ccf6e2f5495c752089a516301c909eb36",
        "checked": "2026-10-30",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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    ],
    "package_dims": {
      "package_code": "TO-252-2L",
      "source_page": 5,
      "D": {
        "nom_mm": 6.6,
        "range_mm": [
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        ]
      },
      "E1": {
        "nom_mm": 6.1,
        "range_mm": [
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      "E": {
        "nom_mm": 10.1,
        "range_mm": [
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      "e": {
        "nom_mm": 2.286,
        "range_mm": [
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      },
      "A": {
        "nom_mm": 2.3,
        "range_mm": [
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        ]
      },
      "source": "datasheet package drawing, every number found on its page (extract_pins --task dims)",
      "model_check": {
        "file": "ipd30n10s3l34-hxy.step",
        "verdict": "PASS",
        "reasons": [
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        "by": "factory/package_fit.py"
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  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "TO-252-2L",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "3"
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    "characteristics": {
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      "source": "datasheet",
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      "rows": [
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          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
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          "conditions": "",
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        {
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          "conditions": "",
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        {
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          "conditions": "VGS @ 10V",
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        {
          "name": "Total Power Dissipation",
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          "conditions": "TC=25℃",
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        },
        {
          "name": "Storage Temperature Range",
          "symbol": "TSTG",
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          "unit": "℃",
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          "conditions": "",
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        {
          "name": "Operating Junction Temperature Range",
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        {
          "name": "Thermal Resistance Junction-Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 3.6,
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        {
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          "typ": null,
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          "conditions": "VGS=0V, ID=250μA",
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        {
          "name": "Zero Gate Voltage Drain Current",
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          "conditions": "VDS=100V, VGS=0V",
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          "source": "datasheet"
        },
        {
          "name": "Gate to Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
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          "typ": null,
          "max": 100,
          "conditions": "VDS=0V, VGS=±20V",
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        {
          "name": "Gate Threshold Voltage",
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          "typ": 1.5,
          "max": 2.2,
          "conditions": "VDS=VGS, ID=250μA",
          "source_page": 2,
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        {
          "name": "Static Drain-Source on-Resistance",
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          "unit": "mΩ",
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        {
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          "min": null,
          "typ": 39,
          "max": 55,
          "conditions": "VGS=4.5V, ID=6A",
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        },
        {
          "name": "Maximum Continuous Drain to Source Diode Forward Current",
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        {
          "name": "Maximum Pulsed Drain to Source Diode Forward Current",
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  "discovery_pitch": "IPD30N10S3L34-HXY (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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