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IPD30N10S3L34-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPD30N10S3L34-HXY
HXY MOSFET · MOSFETs · TO-252-2L
IPD30N10S3L34-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±20 V with a gate threshold VGS(th) of 1.0 to 2.2 V at VDS=VGS and ID=250μA. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 100 V and a continuous drain current ID of 30 A at TC=25℃. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet gives no source-specific limit, with body diode continuous forward current IS of 27 A maximum and VSD of 1.2 V maximum at IS=20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 30 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 13 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 30 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 42 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.2 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 37 | 48 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 39 | 55 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 27 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 80 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=20A | 2 |
CAD (KiCad official)
- Symbol:
IPD30N10S3L34-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
ipd30n10s3l34-hxy-etched.step/ipd30n10s3l34-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipd30n10s3l34-hxy.step/ipd30n10s3l34-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
a2a4ddbd2a64de35, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).