# IPD25CN10NG-VB

**VBsemi Elec** · MOSFETs · TO-252

IPD25CN10NG-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±20 V with a threshold of 2.5 V min to 5 V max at ID = 250 µA. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 100 V and a pulsed drain current of 140 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, carrying up to 45 A continuous drain current (package limited) at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `IPD25CN10NG-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ipd25cn10ng-vb-etched.step` / `ipd25cn10ng-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipd25cn10ng-vb.step` / `ipd25cn10ng-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/ipd25cn10ng-vb-datasheet.pdf) (8 pp, sha256 `c493feff619dbbcc`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipd25cn10ng-vb-datasheet.pdf)