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IPD25CN10NG-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPD25CN10NG-VB

VBsemi Elec · MOSFETs · TO-252

IPD25CN10NG-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±20 V with a threshold of 2.5 V min to 5 V max at ID = 250 µA.
2 D passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 100 V and a pulsed drain current of 140 A.
3 S passive Source terminal of the N-channel MOSFET, carrying up to 45 A continuous drain current (package limited) at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IPD25CN10NG-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd25cn10ng-vb-etched.step / ipd25cn10ng-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd25cn10ng-vb.step / ipd25cn10ng-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 c493feff619dbbcc, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF