component
IPD038N06NF2SATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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{
"schema_version": 1,
"type": "component",
"slug": "ipd038n06nf2satma1",
"title": "IPD038N06NF2SATMA1",
"brief": "Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"triode-mos tube-transistor",
"ipd038n06nf2satma1",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "IPD038N06NF2SATMA1",
"manufacturer": "Infineon Technologies",
"package": "TO-252",
"pin_count": 3,
"category": "Triode/MOS Tube/Transistor",
"subcategory": "MOSFETs",
"datasheet": "https://www.infineon.com/dgdl/Infineon-IPD038N06NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8386267f0183ad6c7fb66010",
"parts": {
"symbol": "ipd038n06nf2satma1.kicad_sym",
"footprint": "ipd038n06nf2satma1.kicad_mod",
"model_3d": "ipd038n06nf2satma1-hero.glb",
"model_3d_plain": "ipd038n06nf2satma1-etched.glb",
"model_3d_step": "ipd038n06nf2satma1-etched.step",
"model_3d_step_plain": "ipd038n06nf2satma1.step",
"lbr": "ipd038n06nf2satma1.lbr"
},
"distributor_links": {
"lcsc": "C20191574",
"digikey": "448-IPD038N06NF2SATMA1TR-ND",
"mouser": "726-IPD038N06NF2SATM"
},
"distributor_check": {
"checked_at": "2026-11-02T17:48:02Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": "448-IPD038N06NF2SATMA1TR-ND",
"status": "found"
},
"mouser": {
"pn": "726-IPD038N06NF2SATM",
"status": "found"
}
},
"pins": [
{
"number": "1",
"name": "Gate",
"type": "input",
"description": "Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of -20 V to 20 V."
},
{
"number": "2",
"name": "Drain",
"type": "passive",
"description": "Drain terminal, connected to the mounting tab of the PG-TO252-3 package."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source terminal of the N-channel MOSFET."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The MPN suffix ATMA1 is not printed in the datasheet, which lists the base type IPD038N06NF2S. The p"
],
"pages_sent": 13,
"cost_usd": 0.0113,
"at": "2026-11-02T17:47:54"
},
"datasheet": {
"url": "https://www.infineon.com/dgdl/Infineon-IPD038N06NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8386267f0183ad6c7fb66010",
"pages": 13,
"sha256": "f024e5e959fd8d32",
"source_tier": "mfr"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "ipd038n06nf2satma1.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
"checked": "2026-11-02",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "ipd038n06nf2satma1-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "9586e5a991c6c6c1eb241a3bca66cfb5795e4fcfb460d14d1516ae80105904bc",
"checked": "2026-11-02",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "Infineon Technologies",
"Package": "TO-252",
"Category": "Triode/MOS Tube/Transistor",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "f024e5e959fd8d32af26b660a89b617cb255aae7623343468f2f05d315f14764",
"rows": [
{
"name": "Continuous drain current",
"symbol": "I_D",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 120,
"conditions": "V_GS=10 V, T=25 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Continuous drain current",
"symbol": "I_D",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 86,
"conditions": "V_GS=10 V, T=100 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Continuous drain current",
"symbol": "I_D",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 20,
"conditions": "V_GS=10 V, T=25 °C, R_thJA=50 °C/W",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Pulsed drain current",
"symbol": "I_D,pulse",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 480,
"conditions": "T=25 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Avalanche energy, single pulse",
"symbol": "E_AS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 94,
"conditions": "I_D=60 A, R_GS=25 Ω",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate source voltage",
"symbol": "V_GS",
"kind": "absolute_maximum",
"unit": "V",
"min": -20,
"typ": null,
"max": 20,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Power dissipation",
"symbol": "P_tot",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 107,
"conditions": "T=25 °C",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Power dissipation",
"symbol": "P_tot",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 3,
"conditions": "T=25 °C, R_thJA=50 °C/W",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Operating and storage temperature",
"symbol": "T_j, T_stg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 175,
"conditions": "",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Thermal resistance, junction-case",
"symbol": "R_thJC",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 1.4,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Thermal resistance, junction-ambient, 6 cm² cooling area",
"symbol": "R_thJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 50,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Thermal resistance, junction-ambient, minimal footprint",
"symbol": "R_thJA",
"kind": "thermal",
"unit": "°C/W",
"min": null,
"typ": null,
"max": 75,
"conditions": "",
"source_page": 4,
"source": "datasheet"
},
{
"name": "Drain-source breakdown voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 60,
"typ": null,
"max": null,
"conditions": "V_GS=0 V, I_D=1 mA",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate threshold voltage",
"symbol": "V_GS(th)",
"kind": "electrical",
"unit": "V",
"min": 2.1,
"typ": 2.8,
"max": 3.3,
"conditions": "V_DS=V_GS, I_D=52 μA",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current",
"symbol": "I_DSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": 0.5,
"max": 10,
"conditions": "V_DS=60 V, V_GS=0 V, T=25 °C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Zero gate voltage drain current",
"symbol": "I_DSS",
"kind": "electrical",
"unit": "μA",
"min": null,
"typ": 1,
"max": 100,
"conditions": "V_DS=60 V, V_GS=0 V, T=125 °C",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate-source leakage current",
"symbol": "I_GSS",
"kind": "electrical",
"unit": "nA",
"min": null,
"typ": 10,
"max": 100,
"conditions": "V_GS=20 V, V_DS=0 V",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Drain-source on-state resistance",
"symbol": "R_DS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 3.4,
"max": 4.5,
"conditions": "V_GS=10 V, I_D=60 A",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Drain-source on-state resistance",
"symbol": "R_DS(on)",
"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 3.85,
"max": 6.3,
"conditions": "V_GS=6 V, I_D=30 A",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Transconductance",
"symbol": "g_fs",
"kind": "electrical",
"unit": "S",
"min": 55,
"typ": null,
"max": null,
"conditions": "|V_DS|≥2|I_D|R_DS(on)max, I_D=60 A",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate charge total",
"symbol": "Q_g",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 45,
"max": 68,
"conditions": "V_DD=30 V, I_D=60 A, V_GS=0 to 10 V",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Diode continuous forward current",
"symbol": "I_S",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 89,
"conditions": "T=25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Diode pulse current",
"symbol": "I_S,pulse",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 480,
"conditions": "T=25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Diode forward voltage",
"symbol": "V_SD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 0.93,
"max": 1.1,
"conditions": "V_GS=0 V, I_F=60 A, T=25 °C",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Gate resistance",
"symbol": "R_G",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 3.2,
"max": null,
"conditions": "",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Input capacitance",
"symbol": "C_iss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 3000,
"max": null,
"conditions": "V_GS=0 V, V_DS=30 V, f=1 MHz",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Output capacitance",
"symbol": "C_oss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 670,
"max": null,
"conditions": "V_GS=0 V, V_DS=30 V, f=1 MHz",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Reverse transfer capacitance",
"symbol": "C_rss",
"kind": "electrical",
"unit": "pF",
"min": null,
"typ": 43,
"max": null,
"conditions": "V_GS=0 V, V_DS=30 V, f=1 MHz",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Turn-on delay time",
"symbol": "t_d(on)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 26,
"max": null,
"conditions": "V_DD=30 V, V_GS=10 V, I_D=60 A, R_G,ext=1.6 Ω",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Rise time",
"symbol": "t_r",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 23,
"max": null,
"conditions": "V_DD=30 V, V_GS=10 V, I_D=60 A, R_G,ext=1.6 Ω",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Turn-off delay time",
"symbol": "t_d(off)",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 45,
"max": null,
"conditions": "V_DD=30 V, V_GS=10 V, I_D=60 A, R_G,ext=1.6 Ω",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Fall time",
"symbol": "t_f",
"kind": "timing",
"unit": "ns",
"min": null,
"typ": 13,
"max": null,
"conditions": "V_DD=30 V, V_GS=10 V, I_D=60 A, R_G,ext=1.6 Ω",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate to source charge",
"symbol": "Q_gs",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 14,
"max": null,
"conditions": "V_DD=30 V, I_D=60 A, V_GS=0 to 10 V",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate charge at threshold",
"symbol": "Q_g(th)",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 8.5,
"max": null,
"conditions": "V_DD=30 V, I_D=60 A, V_GS=0 to 10 V",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate to drain charge",
"symbol": "Q_gd",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 8.8,
"max": null,
"conditions": "V_DD=30 V, I_D=60 A, V_GS=0 to 10 V",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Switching charge",
"symbol": "Q_sw",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 15,
"max": null,
"conditions": "V_DD=30 V, I_D=60 A, V_GS=0 to 10 V",
"source_page": 5,
"source": "datasheet"
},
{
"name": "Gate plateau voltage",
"symbol": "V_plateau",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": 4.7,
"max": null,
"conditions": "V_DD=30 V, I_D=60 A, V_GS=0 to 10 V",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Gate charge total, sync. FET",
"symbol": "Q_g(sync)",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 41,
"max": null,
"conditions": "V_DS=0.1 V, V_GS=0 to 10 V",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Output charge",
"symbol": "Q_oss",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 46,
"max": null,
"conditions": "V_DD=30 V, V_GS=0 V",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Reverse recovery time",
"symbol": "t_rr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 39,
"max": null,
"conditions": "V_R=30 V, I_F=60 A, di_F/dt=100 A/μs",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Reverse recovery charge",
"symbol": "Q_rr",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 39,
"max": null,
"conditions": "V_R=30 V, I_F=60 A, di_F/dt=100 A/μs",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Reverse recovery time",
"symbol": "t_rr",
"kind": "electrical",
"unit": "ns",
"min": null,
"typ": 25,
"max": null,
"conditions": "V_R=30 V, I_F=60 A, di_F/dt=500 A/μs",
"source_page": 6,
"source": "datasheet"
},
{
"name": "Reverse recovery charge",
"symbol": "Q_rr",
"kind": "electrical",
"unit": "nC",
"min": null,
"typ": 97,
"max": null,
"conditions": "V_R=30 V, I_F=60 A, di_F/dt=500 A/μs",
"source_page": 6,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"ipd038n06nf2satma1"
],
"discovery_pitch": "IPD038N06NF2SATMA1 (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"ipd038n06nf2satma1.kicad_sym",
"ipd038n06nf2satma1.kicad_mod",
"ipd038n06nf2satma1.glb",
"ipd038n06nf2satma1.step",
"ipd038n06nf2satma1.lbr",
"docs/hero.png",
"docs/ipd038n06nf2satma1-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"ipd038n06nf2satma1-hero.glb",
"ipd038n06nf2satma1-hero.overlay.json",
"ipd038n06nf2satma1-etched.glb"
],
"visibility": {
"public": true
}
}