component

IPD038N06NF2SATMA1

Public Made by Adom

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Infineon Technologies MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripd038n06nf2satma1factory-2.0.0extractor-text

Verified IPD038N06NF2SATMA1

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPD038N06NF2SATMA1 · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 13-page datasheet
  • ✓distributor: lcsc C20191574, digikey 448-IPD038N06NF2SATMA1TR-ND, mouser 726-IPD038N06NF2SATM
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-qcgl8_wf/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipd038n06nf2satma1.kicad_sym✓ ipd038n06nf2satma1.kicad_mod✓ ipd038n06nf2satma1.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers ipd038n06nf2satma1: viewers · Ray 4d ago
ipd038n06nf2satma1-etched.glb Publish 0.1.0 · Ray 4d ago
ipd038n06nf2satma1-etched.step ipd038n06nf2satma1: factory component page (tier=mfr) · Ray 4d ago
ipd038n06nf2satma1-hero.glb ipd038n06nf2satma1: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
ipd038n06nf2satma1-hero.overlay.json Publish 0.1.0 · Ray 4d ago
ipd038n06nf2satma1.glb Publish 0.1.0 · Ray 4d ago
ipd038n06nf2satma1.kicad_mod Publish 0.1.0 · Ray 4d ago
ipd038n06nf2satma1.kicad_sym Publish 0.1.0 · Ray 4d ago
ipd038n06nf2satma1.lbr Publish 0.1.0 · Ray 4d ago
ipd038n06nf2satma1.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 4d ago

IPD038N06NF2SATMA1

Infineon Technologies · MOSFETs · TO-252

IPD038N06NF2SATMA1 from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of -20 V to 20 V.
2 Drain passive Drain terminal, connected to the mounting tab of the PG-TO252-3 package.
3 Source passive Source terminal of the N-channel MOSFET.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current I_D 120 A V_GS=10 V, T=25 °C 3
Continuous drain current I_D 86 A V_GS=10 V, T=100 °C 3
Continuous drain current I_D 20 A V_GS=10 V, T=25 °C, R_thJA=50 °C/W 3
Pulsed drain current I_D,pulse 480 A T=25 °C 3
Avalanche energy, single pulse E_AS 94 mJ I_D=60 A, R_GS=25 Ω 3
Gate source voltage V_GS -20 20 V 3
Power dissipation P_tot 107 W T=25 °C 3
Power dissipation P_tot 3 W T=25 °C, R_thJA=50 °C/W 3
Operating and storage temperature T_j, T_stg -55 175 °C 3
Thermal resistance, junction-case R_thJC 1.4 °C/W 4
Thermal resistance, junction-ambient, 6 cm² cooling area R_thJA 50 °C/W 4
Thermal resistance, junction-ambient, minimal footprint R_thJA 75 °C/W 4
Drain-source breakdown voltage V(BR)DSS 60 V V_GS=0 V, I_D=1 mA 5
Gate threshold voltage V_GS(th) 2.1 2.8 3.3 V V_DS=V_GS, I_D=52 μA 5
Zero gate voltage drain current I_DSS 0.5 10 μA V_DS=60 V, V_GS=0 V, T=25 °C 5
Zero gate voltage drain current I_DSS 1 100 μA V_DS=60 V, V_GS=0 V, T=125 °C 5
Gate-source leakage current I_GSS 10 100 nA V_GS=20 V, V_DS=0 V 5
Drain-source on-state resistance R_DS(on) 3.4 4.5 mΩ V_GS=10 V, I_D=60 A 5
Drain-source on-state resistance R_DS(on) 3.85 6.3 mΩ V_GS=6 V, I_D=30 A 5
Transconductance g_fs 55 S /V_DS/≥2/I_D/R_DS(on)max, I_D=60 A 5
Gate charge total Q_g 45 68 nC V_DD=30 V, I_D=60 A, V_GS=0 to 10 V 5
Diode continuous forward current I_S 89 A T=25 °C 6
Diode pulse current I_S,pulse 480 A T=25 °C 6
Diode forward voltage V_SD 0.93 1.1 V V_GS=0 V, I_F=60 A, T=25 °C 6
Gate resistance R_G 3.2 Ω 5
Input capacitance C_iss 3000 pF V_GS=0 V, V_DS=30 V, f=1 MHz 5
Output capacitance C_oss 670 pF V_GS=0 V, V_DS=30 V, f=1 MHz 5
Reverse transfer capacitance C_rss 43 pF V_GS=0 V, V_DS=30 V, f=1 MHz 5
Turn-on delay time t_d(on) 26 ns V_DD=30 V, V_GS=10 V, I_D=60 A, R_G,ext=1.6 Ω 5
Rise time t_r 23 ns V_DD=30 V, V_GS=10 V, I_D=60 A, R_G,ext=1.6 Ω 5
Turn-off delay time t_d(off) 45 ns V_DD=30 V, V_GS=10 V, I_D=60 A, R_G,ext=1.6 Ω 5
Fall time t_f 13 ns V_DD=30 V, V_GS=10 V, I_D=60 A, R_G,ext=1.6 Ω 5
Gate to source charge Q_gs 14 nC V_DD=30 V, I_D=60 A, V_GS=0 to 10 V 5
Gate charge at threshold Q_g(th) 8.5 nC V_DD=30 V, I_D=60 A, V_GS=0 to 10 V 5
Gate to drain charge Q_gd 8.8 nC V_DD=30 V, I_D=60 A, V_GS=0 to 10 V 5
Switching charge Q_sw 15 nC V_DD=30 V, I_D=60 A, V_GS=0 to 10 V 5
Gate plateau voltage V_plateau 4.7 V V_DD=30 V, I_D=60 A, V_GS=0 to 10 V 6
Gate charge total, sync. FET Q_g(sync) 41 nC V_DS=0.1 V, V_GS=0 to 10 V 6
Output charge Q_oss 46 nC V_DD=30 V, V_GS=0 V 6
Reverse recovery time t_rr 39 ns V_R=30 V, I_F=60 A, di_F/dt=100 A/μs 6
Reverse recovery charge Q_rr 39 nC V_R=30 V, I_F=60 A, di_F/dt=100 A/μs 6
Reverse recovery time t_rr 25 ns V_R=30 V, I_F=60 A, di_F/dt=500 A/μs 6
Reverse recovery charge Q_rr 97 nC V_R=30 V, I_F=60 A, di_F/dt=500 A/μs 6

CAD (KiCad official)

  • Symbol: IPD038N06NF2SATMA1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ipd038n06nf2satma1-etched.step / ipd038n06nf2satma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipd038n06nf2satma1.step / ipd038n06nf2satma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 f024e5e959fd8d32, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF