main
Ray Set visibility: public c4ed960 7d ago
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{
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  "type": "component",
  "slug": "ipb80n08s2l07atma1",
  "title": "IPB80N08S2L07ATMA1",
  "brief": "Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "IPB80N08S2L07ATMA1",
    "manufacturer": "Infineon Technologies",
    "package": "TO-263",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.infineon.com/dgdl/Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t",
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      "model_3d_step_plain": "ipb80n08s2l07atma1.step",
      "lbr": "ipb80n08s2l07atma1.lbr"
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    "distributor_links": {
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      "digikey": "IPB80N08S2L07ATMA1TR-ND",
      "mouser": "726-IPB80N08S2L07ATM"
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    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "IPB80N08S2L07ATMA1TR-ND",
        "status": "found"
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      "mouser": {
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        "status": "found",
        "lifecycle": "Obsolete"
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        "name": "G",
        "type": "input",
        "description": "Gate (pin 1); logic-level gate with VGS rated ±20 V and threshold 1.2 to 2.0 V at ID=250 µA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
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      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source (pin 3); carries the 80 A continuous drain current and the body diode forward current up to 80 A."
      }
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        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The tab is labelled '2 (tab)' on the package picture, so it is the drain and the same net as pin 2. ",
          "vision extraction: provenance cannot be text-verified; needs consensus"
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        "pages_sent": 9,
        "cost_usd": 0.1972,
        "at": "2026-10-31T01:50:40"
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        "pages": 9,
        "sha256": "cb2d341f621b3bb7",
        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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      "Package": "TO-263",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "3"
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          "name": "Continuous drain current",
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        {
          "name": "Avalanche energy, single pulse",
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          "kind": "absolute_maximum",
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          "name": "Gate source voltage",
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          "name": "Power dissipation",
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          "unit": "W",
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          "conditions": "TC=25 °C",
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          "name": "Operating and storage temperature",
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          "name": "Thermal resistance, junction - case",
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        {
          "name": "Thermal resistance, junction - ambient, SMD, minimal footprint",
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          "conditions": "SMD version, device on PCB, minimal footprint",
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        {
          "name": "Thermal resistance, junction - ambient, SMD, 6 cm2 cooling area",
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          "max": 40,
          "conditions": "SMD version, device on PCB, 6 cm2 cooling area",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
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          "min": 75,
          "typ": null,
          "max": null,
          "conditions": "VGS=0 V, ID=1 mA",
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          "source": "datasheet"
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        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.2,
          "typ": 1.6,
          "max": 2,
          "conditions": "VDS=VGS, ID=250 µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
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          "typ": 0.01,
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          "conditions": "VDS=75 V, VGS=0 V, Tj=25 °C",
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          "name": "Zero gate voltage drain current",
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        {
          "name": "Gate-source leakage current",
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          "kind": "electrical",
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          "min": null,
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          "max": 100,
          "conditions": "VGS=20 V, VDS=0 V",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Drain-source on-state resistance",
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          "name": "Drain-source on-state resistance",
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          "max": 6.8,
          "conditions": "VGS=10 V, ID=80 A, SMD version",
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          "source": "datasheet"
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        {
          "name": "Gate to source charge",
          "symbol": "Qgs",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 18,
          "max": 23,
          "conditions": "VDD=60 V, ID=80 A, VGS=0 to 10 V",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Gate to drain charge",
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          "source_page": 3,
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          "name": "Gate charge total",
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          "name": "Diode continuous forward current",
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          "typ": null,
          "max": 80,
          "conditions": "TC=25 °C",
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          "name": "Diode pulse current",
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          "conditions": "TC=25 °C",
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          "name": "Diode forward voltage",
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          "max": 1.3,
          "conditions": "VGS=0 V, IF=80 A, Tj=25 °C",
          "source_page": 3,
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        {
          "name": "Reverse recovery time",
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          "kind": "electrical",
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          "min": null,
          "typ": 95,
          "max": 120,
          "conditions": "VR=40 V, IF=IS, diF/dt=100 A/µs",
          "source_page": 3,
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          "name": "Reverse recovery charge",
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          "kind": "electrical",
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          "conditions": "VR=40 V, IF=IS, diF/dt=100 A/µs",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Input capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 5400,
          "max": null,
          "conditions": "VGS=0 V, VDS=25 V, f=1 MHz",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Output capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 1300,
          "max": null,
          "conditions": "VGS=0 V, VDS=25 V, f=1 MHz",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Reverse transfer capacitance",
          "symbol": "Crss",
          "kind": "electrical",
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          "min": null,
          "typ": 590,
          "max": null,
          "conditions": "VGS=0 V, VDS=25 V, f=1 MHz",
          "source_page": 3,
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        {
          "name": "Turn-on delay time",
          "symbol": "td(on)",
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          "typ": 19,
          "max": null,
          "conditions": "VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W",
          "source_page": 3,
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          "typ": 55,
          "max": null,
          "conditions": "VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W",
          "source_page": 3,
          "source": "datasheet"
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          "typ": 85,
          "max": null,
          "conditions": "VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W",
          "source_page": 3,
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          "min": null,
          "typ": 22,
          "max": null,
          "conditions": "VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W",
          "source_page": 3,
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        {
          "name": "Gate plateau voltage",
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          "min": null,
          "typ": 3.4,
          "max": null,
          "conditions": "VDD=60 V, ID=80 A, VGS=0 to 10 V",
          "source_page": 3,
          "source": "datasheet"
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  "discovery_triggers": [
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  "discovery_pitch": "IPB80N08S2L07ATMA1 (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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