component
IPB80N08S2L07ATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPB80N08S2L07ATMA1
Infineon Technologies · MOSFETs · TO-263
IPB80N08S2L07ATMA1 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate (pin 1); logic-level gate with VGS rated ±20 V and threshold 1.2 to 2.0 V at ID=250 µA. |
| 2 | D | passive | Drain (pin 2, also the tab); VDS 75 V, continuous current 80 A and pulsed current 320 A at TC=25 °C. |
| 3 | S | passive | Source (pin 3); carries the 80 A continuous drain current and the body diode forward current up to 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 80 | A | TC=25 °C, VGS=10 V | 1 | ||
| Pulsed drain current | ID,pulse | 320 | A | TC=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 810 | mJ | ID=80A | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 300 | W | TC=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction - case | RthJC | 0.5 | K/W | 2 | |||
| Thermal resistance, junction - ambient, SMD, minimal footprint | RthJA | 62 | K/W | SMD version, device on PCB, minimal footprint | 2 | ||
| Thermal resistance, junction - ambient, SMD, 6 cm2 cooling area | RthJA | 40 | K/W | SMD version, device on PCB, 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 75 | V | VGS=0 V, ID=1 mA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.2 | 1.6 | 2 | V | VDS=VGS, ID=250 µA | 2 |
| Zero gate voltage drain current | IDSS | 0.01 | 1 | µA | VDS=75 V, VGS=0 V, Tj=25 °C | 2 | |
| Zero gate voltage drain current | IDSS | 1 | 100 | µA | VDS=75 V, VGS=0 V, Tj=125 °C | 2 | |
| Gate-source leakage current | IGSS | 1 | 100 | nA | VGS=20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance | RDS(on) | 6.3 | 8.7 | mW | VGS=4.5 V, ID=80 A, SMD version | 2 | |
| Drain-source on-state resistance | RDS(on) | 4.8 | 6.8 | mΩ | VGS=10 V, ID=80 A, SMD version | 2 | |
| Gate to source charge | Qgs | 18 | 23 | nC | VDD=60 V, ID=80 A, VGS=0 to 10 V | 3 | |
| Gate to drain charge | Qgd | 69 | 83 | nC | VDD=60 V, ID=80 A, VGS=0 to 10 V | 3 | |
| Gate charge total | Qg | 183 | 233 | nC | VDD=60 V, ID=80 A, VGS=0 to 10 V | 3 | |
| Diode continuous forward current | IS | 80 | A | TC=25 °C | 3 | ||
| Diode pulse current | IS,pulse | 320 | A | TC=25 °C | 3 | ||
| Diode forward voltage | VSD | 0.9 | 1.3 | V | VGS=0 V, IF=80 A, Tj=25 °C | 3 | |
| Reverse recovery time | trr | 95 | 120 | ns | VR=40 V, IF=IS, diF/dt=100 A/µs | 3 | |
| Reverse recovery charge | Qrr | 240 | 300 | nC | VR=40 V, IF=IS, diF/dt=100 A/µs | 3 | |
| Input capacitance | Ciss | 5400 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | ||
| Output capacitance | Coss | 1300 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | ||
| Reverse transfer capacitance | Crss | 590 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | ||
| Turn-on delay time | td(on) | 19 | ns | VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W | 3 | ||
| Rise time | tr | 55 | ns | VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W | 3 | ||
| Turn-off delay time | td(off) | 85 | ns | VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W | 3 | ||
| Fall time | tf | 22 | ns | VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W | 3 | ||
| Gate plateau voltage | Vplateau | 3.4 | V | VDD=60 V, ID=80 A, VGS=0 to 10 V | 3 |
CAD (KiCad official)
- Symbol:
IPB80N08S2L07ATMA1 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ipb80n08s2l07atma1-etched.step/ipb80n08s2l07atma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb80n08s2l07atma1.step/ipb80n08s2l07atma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
cb2d341f621b3bb7, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).