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IPB80N08S2L07ATMA1

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Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripb80n08s2l07atma1factory-2.0.0extractor-text

Verified IPB80N08S2L07ATMA1

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPB80N08S2L07ATMA1 · TO-263 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • ✓distributor: lcsc C3289252, digikey IPB80N08S2L07ATMA1TR-ND, mouser 726-IPB80N08S2L07ATM
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-74ktw8ov/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipb80n08s2l07atma1.kicad_sym✓ ipb80n08s2l07atma1.kicad_mod✓ ipb80n08s2l07atma1.step
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Ray Publish 0.1.0 3917a20 7d ago

IPB80N08S2L07ATMA1

Infineon Technologies · MOSFETs · TO-263

IPB80N08S2L07ATMA1 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate (pin 1); logic-level gate with VGS rated ±20 V and threshold 1.2 to 2.0 V at ID=250 µA.
2 D passive Drain (pin 2, also the tab); VDS 75 V, continuous current 80 A and pulsed current 320 A at TC=25 °C.
3 S passive Source (pin 3); carries the 80 A continuous drain current and the body diode forward current up to 80 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 80 A TC=25 °C, VGS=10 V 1
Pulsed drain current ID,pulse 320 A TC=25 °C 1
Avalanche energy, single pulse EAS 810 mJ ID=80A 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 300 W TC=25 °C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction - case RthJC 0.5 K/W 2
Thermal resistance, junction - ambient, SMD, minimal footprint RthJA 62 K/W SMD version, device on PCB, minimal footprint 2
Thermal resistance, junction - ambient, SMD, 6 cm2 cooling area RthJA 40 K/W SMD version, device on PCB, 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS 75 V VGS=0 V, ID=1 mA 2
Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS=VGS, ID=250 µA 2
Zero gate voltage drain current IDSS 0.01 1 µA VDS=75 V, VGS=0 V, Tj=25 °C 2
Zero gate voltage drain current IDSS 1 100 µA VDS=75 V, VGS=0 V, Tj=125 °C 2
Gate-source leakage current IGSS 1 100 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 6.3 8.7 mW VGS=4.5 V, ID=80 A, SMD version 2
Drain-source on-state resistance RDS(on) 4.8 6.8 mΩ VGS=10 V, ID=80 A, SMD version 2
Gate to source charge Qgs 18 23 nC VDD=60 V, ID=80 A, VGS=0 to 10 V 3
Gate to drain charge Qgd 69 83 nC VDD=60 V, ID=80 A, VGS=0 to 10 V 3
Gate charge total Qg 183 233 nC VDD=60 V, ID=80 A, VGS=0 to 10 V 3
Diode continuous forward current IS 80 A TC=25 °C 3
Diode pulse current IS,pulse 320 A TC=25 °C 3
Diode forward voltage VSD 0.9 1.3 V VGS=0 V, IF=80 A, Tj=25 °C 3
Reverse recovery time trr 95 120 ns VR=40 V, IF=IS, diF/dt=100 A/µs 3
Reverse recovery charge Qrr 240 300 nC VR=40 V, IF=IS, diF/dt=100 A/µs 3
Input capacitance Ciss 5400 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Output capacitance Coss 1300 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Reverse transfer capacitance Crss 590 pF VGS=0 V, VDS=25 V, f=1 MHz 3
Turn-on delay time td(on) 19 ns VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W 3
Rise time tr 55 ns VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W 3
Turn-off delay time td(off) 85 ns VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W 3
Fall time tf 22 ns VDD=40 V, VGS=10 V, ID=80 A, RG=1.1 W 3
Gate plateau voltage Vplateau 3.4 V VDD=60 V, ID=80 A, VGS=0 to 10 V 3

CAD (KiCad official)

  • Symbol: IPB80N08S2L07ATMA1
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ipb80n08s2l07atma1-etched.step / ipb80n08s2l07atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb80n08s2l07atma1.step / ipb80n08s2l07atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 cb2d341f621b3bb7, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF