component
IPB80N04S403ATMA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IPB80N04S403ATMA1
Infineon Technologies · MOSFETs · TO-263
IPB80N04S403ATMA1 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate pin 1 controls the channel, with a maximum gate-source voltage of ±20 V. |
| 2 | Drain | passive | Drain pin 2 is the 40 V drain-source terminal, rated for 80 A continuous drain current at TC=25°C. |
| 3 | Source | passive | Source pin 3 is the power source terminal, carrying 80 A continuous current at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 80 | A | TC=25°C, VGS=10V | 1 | ||
| Pulsed drain current | ID,pulse | 320 | A | TC=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 200 | mJ | ID=40A | 1 | ||
| Avalanche current, single pulse | IAS | 80 | A | 1 | |||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 94 | W | TC=25°C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Thermal resistance, junction-case | RthJC | 1.6 | K/W | 2 | |||
| Thermal resistance, junction-ambient, leaded | RthJA | 62 | K/W | 2 | |||
| Thermal resistance, junction-ambient, SMD minimal footprint | RthJA | 62 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction-ambient, SMD 6 cm2 cooling | RthJA | 40 | K/W | 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 40 | V | VGS=0V, ID=1mA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=53µA | 2 |
| Zero gate voltage drain current | IDSS | 0.03 | 1 | µA | VDS=40V, VGS=0V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | 20 | µA | VDS=18V, VGS=0V, Tj=85°C | 2 | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 3.2 | 3.7 | mΩ | VGS=10V, ID=80A | 2 | |
| Drain-source on-state resistance, SMD version | RDS(on) | 2.8 | 3.3 | mΩ | VGS=10V, ID=80A, SMD version | 2 | |
| Input capacitance | Ciss | 4050 | 5260 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Output capacitance | Coss | 950 | 1230 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 31 | 71 | pF | VGS=0V, VDS=25V, f=1MHz | 3 | |
| Turn-on delay time | td(on) | 14 | ns | VDD=20V, VGS=10V, ID=80A, RG=3.5Ω | 3 | ||
| Rise time | tr | 12 | ns | VDD=20V, VGS=10V, ID=80A, RG=3.5Ω | 3 | ||
| Turn-off delay time | td(off) | 14 | ns | VDD=20V, VGS=10V, ID=80A, RG=3.5Ω | 3 | ||
| Fall time | tf | 16 | ns | VDD=20V, VGS=10V, ID=80A, RG=3.5Ω | 3 | ||
| Gate to source charge | Qgs | 24 | 31 | nC | VDD=32V, ID=80A, VGS=0 to 10V | 3 | |
| Gate to drain charge | Qgd | 7 | 17 | nC | VDD=32V, ID=80A, VGS=0 to 10V | 3 | |
| Gate charge total | Qg | 51 | 66 | nC | VDD=32V, ID=80A, VGS=0 to 10V | 3 | |
| Gate plateau voltage | Vplateau | 5.8 | V | VDD=32V, ID=80A, VGS=0 to 10V | 3 | ||
| Diode continuous forward current | IS | 80 | A | TC=25°C | 3 | ||
| Diode pulse current | IS,pulse | 320 | A | TC=25°C | 3 | ||
| Diode forward voltage | VSD | 0.9 | 1.3 | V | VGS=0V, IF=80A, Tj=25°C | 3 | |
| Reverse recovery time | trr | 43 | ns | VR=20V, IF=50A, diF/dt=100A/µs | 3 | ||
| Reverse recovery charge | Qrr | 44 | nC | VR=20V, IF=50A, diF/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
IPB80N04S403ATMA1 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ipb80n04s403atma1-etched.step/ipb80n04s403atma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb80n04s403atma1.step/ipb80n04s403atma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
b5a5b3a557be9894, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).