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IPB80N04S403ATMA1

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Infineon Technologies MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsipb80n04s403atma1factory-2.0.0extractor-text

Verified IPB80N04S403ATMA1

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPB80N04S403ATMA1 · TO-263 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['mouser'] number
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-kod8vvlv/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipb80n04s403atma1.kicad_sym✓ ipb80n04s403atma1.kicad_mod✓ ipb80n04s403atma1.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

IPB80N04S403ATMA1

Infineon Technologies · MOSFETs · TO-263

IPB80N04S403ATMA1 from Infineon Technologies, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate pin 1 controls the channel, with a maximum gate-source voltage of ±20 V.
2 Drain passive Drain pin 2 is the 40 V drain-source terminal, rated for 80 A continuous drain current at TC=25°C.
3 Source passive Source pin 3 is the power source terminal, carrying 80 A continuous current at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 80 A TC=25°C, VGS=10V 1
Pulsed drain current ID,pulse 320 A TC=25°C 1
Avalanche energy, single pulse EAS 200 mJ ID=40A 1
Avalanche current, single pulse IAS 80 A 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 94 W TC=25°C 1
Operating and storage temperature Tj, Tstg -55 175 °C 1
Thermal resistance, junction-case RthJC 1.6 K/W 2
Thermal resistance, junction-ambient, leaded RthJA 62 K/W 2
Thermal resistance, junction-ambient, SMD minimal footprint RthJA 62 K/W minimal footprint 2
Thermal resistance, junction-ambient, SMD 6 cm2 cooling RthJA 40 K/W 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS 40 V VGS=0V, ID=1mA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=53µA 2
Zero gate voltage drain current IDSS 0.03 1 µA VDS=40V, VGS=0V 2
Zero gate voltage drain current IDSS 1 20 µA VDS=18V, VGS=0V, Tj=85°C 2
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 3.2 3.7 mΩ VGS=10V, ID=80A 2
Drain-source on-state resistance, SMD version RDS(on) 2.8 3.3 mΩ VGS=10V, ID=80A, SMD version 2
Input capacitance Ciss 4050 5260 pF VGS=0V, VDS=25V, f=1MHz 3
Output capacitance Coss 950 1230 pF VGS=0V, VDS=25V, f=1MHz 3
Reverse transfer capacitance Crss 31 71 pF VGS=0V, VDS=25V, f=1MHz 3
Turn-on delay time td(on) 14 ns VDD=20V, VGS=10V, ID=80A, RG=3.5Ω 3
Rise time tr 12 ns VDD=20V, VGS=10V, ID=80A, RG=3.5Ω 3
Turn-off delay time td(off) 14 ns VDD=20V, VGS=10V, ID=80A, RG=3.5Ω 3
Fall time tf 16 ns VDD=20V, VGS=10V, ID=80A, RG=3.5Ω 3
Gate to source charge Qgs 24 31 nC VDD=32V, ID=80A, VGS=0 to 10V 3
Gate to drain charge Qgd 7 17 nC VDD=32V, ID=80A, VGS=0 to 10V 3
Gate charge total Qg 51 66 nC VDD=32V, ID=80A, VGS=0 to 10V 3
Gate plateau voltage Vplateau 5.8 V VDD=32V, ID=80A, VGS=0 to 10V 3
Diode continuous forward current IS 80 A TC=25°C 3
Diode pulse current IS,pulse 320 A TC=25°C 3
Diode forward voltage VSD 0.9 1.3 V VGS=0V, IF=80A, Tj=25°C 3
Reverse recovery time trr 43 ns VR=20V, IF=50A, diF/dt=100A/µs 3
Reverse recovery charge Qrr 44 nC VR=20V, IF=50A, diF/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: IPB80N04S403ATMA1
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ipb80n04s403atma1-etched.step / ipb80n04s403atma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb80n04s403atma1.step / ipb80n04s403atma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 b5a5b3a557be9894, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF